AS3SB05 Search Results

Contextual Info: ta0 E J> • aS3Sb05 D D M ^ ci37 ST1 « S I E G SIEMENS SIEMENS AKTIEN GESELLSCH AF T - 'f H Æ - i o Single Operational Amplifiers TAA 762 TAA 765 Features Bipolar 1C • W ide common-mode range • Large supply voltage range • Large control range • W ide temperature range TAA 762

Contextual Info: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)

siemens 8032 cpu

Abstract: siemens 8032 SIEMENS 80515 80535 80515 88H1 MC 80535 Microcontroller Family SAB 8051 Pocket Guide 80515 application 80515/80535 8 Bit Microcontroller
Contextual Info: SIEM EN S High-Performance 8-Bit Single Chip Microcontroller SAB 80515/80535 P relim in ary SA B 80515 SAB 80535 • • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM Microcontroller for external ROM

Contextual Info: SIEMENS 4M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

Hall TLE 4905

Abstract: ks SIEMENS hy 214 4935 A9120 diagram induction Hall Siemens magnetic field sensor siemens tle4905 TLE4905 L
Contextual Info: SIEMENS Uni- and Bipolar Hall 1C Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L TLE 4935-2 L; TLE 4945 L Bipolar 1C Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields

Contextual Info: SIEMENS BSP 299 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2-1 - 4.0 V Type Vbs h ^DS(on) Package Marking BSP 299 500 V 0.4 A 4Q SOT-223 BSP 299 Type BSP 299 Ordering Code Q67000-S225 Tape and Reel Information

CSI 24C64

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C64 64 Kbit 8 1 9 2 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet Preliminary 1998-07-27 • aanshos o i n s n 3?t m SLx 24C64 Revision History: Previous Version: Page Page (in previous (in current

Contextual Info: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TU A6026, TUA 6028 Mixer-Oscillator-PLL with unbalanced IF-Amplifier Preliminary Data Sheet 06.99 flS3StiQS 0137727 Tb7 Edition 06.99 Published by Siem ens AG, Bereich Haibleiter, M arketingKom munikation, Balanstrafte 73,

Smart 700 SIEMENS

Abstract: smd diode dtn q67060-s6501 SiEMENS EC 350 99 E3045A Q67060-S6501-A2 SiEMENS EC 150 99 BTS133 B454 n10v
Contextual Info: SIEM ENS HITFET BTS133 Smart Lowside Power Switch Features Product Summary • Logic Level Input • Input protection ESD • Thermal shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Continuous drain source voltage

smd transistor code 314

Abstract: 41282 bts BTS 308 731 zener diode BTS 307 E3062A BTS412B BB 313 BTS 305 GI 312 diode POWER SUPPLY BTS SIEMENS
Contextual Info: • fl235b05 0081444 5T1 SIEM EN S PROFET B TS 412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

Contextual Info: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor zo 103 MA 7S 738

Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS MULTIBANK DRAMS MDRAMS HYB 39M93200 2 88 kx3 2MDRAM HYB 39M83200 256k x 32 MDRAM Advanced Information • Ultra-High Performance 666 MByte/sec single device transfer rate 36 ns RAS access 12 ns CAS access 6 ns burst cycle • Multibank Architecture