A9LC Search Results

A15LC

Abstract: A14L A14LC A12LC CY7C09099V 751V
Contextual Info: “ tv * I PRELIMINARY CY7C09079V/89V/99V CY7C09179V/89V/99V 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location • 6 Flow-Through/Pipelined devices

Contextual Info: IDT7130SA/LA IDT7140SA/LA CMOS DUAL-PORT RAM 8K 1Kx 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 inPLCC and TQFP • Low-power operation

Contextual Info: CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT IDT7130SA/LA IDT7140SA/LA Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 2 5 /3 5 /5 5 /1 00ns (max.) — Commercial: 2 5 /3 5 /5 5 /1 00ns (m ax.) — Commercial: 20ns in P LC C only for 7130

Contextual Info: S March 1994 DATA SHEET_ M 67130/ M 67140 h im R M 1Kx 8 CMOS DUAL PORT RAM FEATURES . . . . FAST ACCESS TIME 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY . 67130L/67140L LOW POWER 67130W67140V VERY LOW POWER . EXPANDABLE DATA BUS T 0 16 BITS OR MORE

Contextual Info: HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709269S/L Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location High-speed clock to data access

m8842

Abstract: F64013S-2C
Contextual Info: July 1990 Edition 3.0 f u DATA SHEET Ji t s u MB8421/8422-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu MB8421 and MB8422 are 2,048 words x 8 bits dual-port high-performance static random access memories SRAMs fabricated in CMOS. The SRAMs use

67130V

Abstract: ajr38 a9lc
Contextual Info: IlM l L 67130/L 67140 DATA SHEET 1Kx8 CMOS DUAL PORT RAM 3.3 Volt FEATURES . SINGLE 3.3 V ±0.3 VOLT POWER SUPPLY . FAST ACCESS TIME 45 NS * TO 70 NS . 67130L/67140L LOW POWER 67130V/67140V VERY LOW POWER . EXPANDABLE DATA BUS T 0 16 BITS OR MORE USING MASTER/SLAVE DEVICES WHEN USING

Contextual Info: PRELIMINARY IDT709279S/L HIGH-SPEED 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM F e a tu re s * True D ual-Ported m em ory c e lls w hich allow sim u lta n e o u s Full sy n c h r o n o u s operation on both p orts a c c e s s of the sa m e m em ory location

MB8421-90L

Abstract: MB8421 MB8421-90 mb8421-12 mbl8086 d480 FC-50P A8LC
Contextual Info: July 1990 Edition 3.0 FUJITSU DATA S H E E T : MB8421/8422-90/-90L/-90LU-12/- 12U - 12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu MB8421 and MB8422 are 2,046 words x 8 bits dual-port high-performance static random access memories SRAMs fabricated in CMOS. The SRAMs use

Contextual Info: April 1991 Edition 1.0 FUJITSU DATA S H E E T MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K x 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8441 is an 8K words x 8 bits dual-port high-performance Static Random Access Memory SRAM fabricated in CMOS. The SRAM uses asynchronous circuitry and

1DT7130

Abstract: 27S29 idt7130 IDT IDT7130LA
Contextual Info: I N T E G R A T E D D E VI CE 47E D à 4ÛSS771 CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT 000^704 T • IDT IDT7130SA/LA IDT7140SA/LA FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) — Commercial: 20/25/30/35/45/55/70/90/100ns (max.)