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    A948 Search Results

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    A948 Price and Stock

    NXP Semiconductors PCA9485FEZ

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    DigiKey PCA9485FEZ Reel 7,000
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    Avnet Americas PCA9485FEZ Reel 7,000
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    NXP Semiconductors PCA9485UKZ

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    DigiKey PCA9485UKZ Reel 6,000
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    Avnet Americas PCA9485UKZ Reel 6,000
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    EBV Elektronik PCA9485UKZ 54 Weeks 6,000
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    Siemens 3VA94810WK30

    BRKR 3VA2 630A R INPLT BRD 1PC 3
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    DigiKey 3VA94810WK30 Box 1
    • 1 $44.85
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    Mouser Electronics 3VA94810WK30
    • 1 $44.85
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    • 100 $38.07
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    Siemens 3VA94830JA13

    BRKR 3VA2 630A BOX TERMINAL 3P
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    DigiKey 3VA94830JA13 Box 1
    • 1 $168.45
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    Siemens 3VA94870SC10

    BRKR 3VA2 630A TOG HNDL EX ACC
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    DigiKey 3VA94870SC10 Box 1
    • 1 $49.52
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    Mouser Electronics 3VA94870SC10 1
    • 1 $49.52
    • 10 $49.37
    • 100 $45.68
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    A948 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: PFR5331J63J11L4BULK F411JH331J063C Capacitor, film, 330 pF, +/-5% Tol, -55/+100C, General Purpose, 63VDC@85C, Lead Spacing=5 mm General Information Supplier: Miscellaneous Electrical: KEMET An operating temperature up to +105C is allowed under certain


    Original     		PFR5331J63J11L4BULK F411JH331J063C) 63VDC 40VAC 63VDC a948bdaf-5cf9-4643-8939-d101b4daca2a PDF

    VOL-6FL4-500

    Abstract: VOL-PPCB-F24K VOL-0256W VOL-PPCB-F48K VOL-6FP4-1000 VOL-0712B VOL-0255W Quante pouyet VOL-PPCA-F24K VOL-6UP4-305
    Text: 3M Telecommunications Solutions for Networks Product Solution Guide for Enterprise Networks Innovation Solutions for Enterprise Networks Everything your Network needs 3M Enterprise Network Solutions offer an array of high performance solutions for copper, fibre and copper/fibre hybrid networks.


    Original     		10Gbps, VF-45 ID3000 VOL-6FL4-500 VOL-PPCB-F24K VOL-0256W VOL-PPCB-F48K VOL-6FP4-1000 VOL-0712B VOL-0255W Quante pouyet VOL-PPCA-F24K VOL-6UP4-305 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 234567489AB6CDEF87D6 E7F32 11 123456789ABCDEAF 3A488FD3BDED ABDED   !AFA3D4B8F723DE82F " %


    Original     		234567489AB6CDEF8 123456789ABCDEAF BD83B AFA3D4B8F723 DE82F B723B D3826 DE82F D3A7644 AFEDE82FBDF PDF

    FM28V100-TG

    Abstract: RAMTRON
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V100 128Kx8 33MHz 32-pin FM28V100 FM28V100-TG RAMTRON PDF

    FM28V020-SG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM28V020 256Kbit 33MHz FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-SG AEC-Q100-002 FM18L08 FM28V020-SGTR PDF

    d6849

    Abstract: No abstract text available
    Text: 123456789ABCDEF9 CCCCCCCCCCCCCCCCCCCCCCCCCCCC CAT5 Audio ExtenderC 1 1 1234356789A56BC23D9346 1 234567184595A1BC7DA1B671B1EDF9AA651 C14A1155411E545981A591B18D651 1FB 51 !CA9481EC4DE57DB185B"5981 5B7A6581A915B9A65811 #CD4$D61EDF9AA65195BEDD591


    Original     		123456789ABCDEF9 1234356789A56BC23D9346 234567184595A1BC7DA1B671B1EDF9A 1E54598 591B18D6 A9481EC 4DE57DB18 1A915B9 A65811 D61EDF9A d6849 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules


    Original     		FM28V100 128Kx8 32-pin FM28V100 PDF

    FM28V020-TG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-TG AEC-Q100-002 FM18L08 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003 PDF

    Untitled

    Abstract: No abstract text available
    Text: 234567489AB6CDEF87D6 E7F32  11 123456789ABCDEAF 3A488FD3BDED ABDED BBB3BDEBB1B3B723ABD83B7DFB8F46A AFA3D4B8F723DE82F ! $


    Original     		234567489AB6CDEF8 123456789ABCDEAF BD83B AFA3D4B8F723 DE82F B723B D3826 DE82F D3A7644 AFEDE82FBDF PDF

    FM28V020-T

    Abstract: No abstract text available
    Text: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		FM28V020 256Kbit 32Kx8 28-pin -T28G) 32-pin FM28V020-T PDF

    MCIMX51RM

    Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
    Text: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:


    Original     		IMX51RMAD. MCIMX51 MCIMX51RM EL516 MCIMX51RM Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129 PDF

    A9370

    Abstract: A9500 A9220 A949 A9440 a9230 A934 A9320 a9430 A9330
    Text: 1,550nm DWDM Direct Modulation DFB Laser FLD5F15CX-A FEATURES • Direct Modulated DFB Laser for WDM systems • Optimized for Long Distance Transmission Dispersion 3200ps/nm • Peak wavelength 1527.99 to 1563.05nm (C Band: 191.8 to 196.2THz, 100GHz spacing)


    Original     		550nm FLD5F15CX-A 3200ps/nm) 100GHz 14-pin 3200ps/nm e4888 A9370 A9500 A9220 A949 A9440 a9230 A934 A9320 a9430 A9330 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM28V100 128Kx8 33MHz FM28V100 FM28V100, FM28V100-TG A9482296TG 128Kx8 PDF

    D0413

    Abstract: A1443 a1047 A849 A1245 A1344 GAL22V10 National semiconductor microcontroller a948 NM24C02
    Text: voltage operation self timed write cycle can have data corruption problems due to noise spikes glitches bus contention etc which may initiate a false write or erase cycle This data corruption is a concern for the designer since the nonvolatile nature of the EEPROM means that after data corruption has occurred it cannot be cleared simply by removing the power for example as with a volatile memory such


    Original     		PDF

    FM28V100-TG

    Abstract: AEC-Q100-002 FM18L08 FM20L08 FM28V100 tca 335 A
    Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM28V100 128Kx8 33MHz FM28V100 FM28V100, FM28V100-TG A9482296TG 128Kx8 FM28V100-TG AEC-Q100-002 FM18L08 FM20L08 tca 335 A PDF

    a4534

    Abstract: No abstract text available
    Text: 234567489AB6CDEF87D6 E7F32 11 123456789ABCDEAF 3A488FD3BDED ABDED   AFA3D4B8F723DE82F ! $


    Original     		234567489AB6CDEF8 123456789ABCDEAF BD83B AFA3D4B8F723 DE82F B723B D3826 DE82F D3A7644 AFEDE82FBDF a4534 PDF

    Untitled

    Abstract: No abstract text available
    Text: 234567489AB6CDEF87D6 E7F32  1 123456789ABCDEAF 3A488FD3BDED ABDED BBBDEB1BBDEA3B 224A !AFA3D4B8F723DE82F "ED #$B723B%D3826$B8F%A3EA3BD48 DE82F&B"A8 2F6 E23$B'ADEB$8F#$B38%A3$BDFB$AF$23$B8F 46A& 'A$ABD3AB2F4BEA 'F8 D4BDED


    Original     		234567489AB6CDEF8 123456789ABCDEAF AFA3D4B8F723 DE82F B723B D3826 DE82F D3A7644 AFEDE82FBDF 89FBAF PDF