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    A9 TRANSISTOR SMD Search Results

    A9 TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A9 TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


    Original     		PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    smd transistor marking A9

    Abstract: smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv
    Text: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally. NPN equivalent:


    Original     		PDF BCM857BS OT363 SC-88) BC857BS. BCM847BS. smd transistor marking A9 smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv

    smd code A9 3 pin transistor

    Abstract: IC SMD MARKING CODE A9 bcm857bs2 MARKING CODE SMD IC smd ic marking A9 smd transistor marking A9 TRANSISTOR SMD MARKING CODES BC857BS BCM857BS transistor marking A9
    Text: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 02 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally.


    Original     		PDF BCM857BS OT363 SC-88) BC857BS. BCM847BS. smd code A9 3 pin transistor IC SMD MARKING CODE A9 bcm857bs2 MARKING CODE SMD IC smd ic marking A9 smd transistor marking A9 TRANSISTOR SMD MARKING CODES BC857BS BCM857BS transistor marking A9

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF 1x106 1x1014 1x109 1x1011 1x10-10 HX6256 28-Lead MIL-STD-1835,

    nmos dynamic ram 6256

    Abstract: HX6256 D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead nmos dynamic ram 6256 HX6256 D-10

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356 36-Lead

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell

    HX6356

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356

    Untitled

    Abstract: No abstract text available
    Text: 123455667 DC-Motor Controller 89ABCD9E7 CPU o o MelexCM CPU Dual RISC CPU – 5MIPS o LIN protocol controller o 16-bit application CPU90 Internal RC-Oscillator Memories o o 2kbyte RAM, 30kbyte Flash, 128 byte EEPROM Flash for series production Periphery


    Original     		PDF 89ABCD9E7 16-bit CPU90 30kbyte 100-kBaud 100Hz 100kHz 16-channel 10-bit

    Untitled

    Abstract: No abstract text available
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA.

    smd code A9 3 pin transistor

    Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
    Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS5612PA OT1061 PBSS4612PA. smd code A9 3 pin transistor smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


    Original     		PDF HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10

    SC74 marking 345

    Abstract: TRANSISTOR SMD MARKING CODE R8
    Text: BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 04 — 16 February 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		PDF BCM857BS; BCM857DS BCM857BS BCM857DS OT363 OT457 SC-88 SC-74 BCM847BS BCM847DS SC74 marking 345 TRANSISTOR SMD MARKING CODE R8

    6kaa

    Abstract: SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28
    Text: HS-6664RH-T TM Data Sheet July 1999 Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF HS-6664RH-T 100kRAD FN4609 MIL-PRF-38535 HS-6664RH-T 6kaa SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28

    TRANSISTOR SMD MARKING CODE BS t

    Abstract: smd marking code bs transistor marking A9 R8 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
    Text: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		PDF BCM857BV; BCM857BS; BCM857DS BCM857BV OT666 BCM847BV BC857BV BCM857BS OT363 SC-88 TRANSISTOR SMD MARKING CODE BS t smd marking code bs transistor marking A9 R8 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV

    TRANSISTOR SMD MARKING CODE BS t

    Abstract: BCM857 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV BCM857DS
    Text: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.


    Original     		PDF BCM857BV; BCM857BS; BCM857DS BCM857BV OT666 BCM847BV BC857BV BCM857BS OT363 SC-88 TRANSISTOR SMD MARKING CODE BS t BCM857 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV BCM857DS

    ta 6203

    Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
    Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced


    Original     		PDF HM-65262 70/85ns HM-65262 ta 6203 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


    OCR Scan     		PDF HM-65642 HM-65642 80C86 80C88 transistor smd hq

    smd transistor NJ

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ