A8A2 Search Results

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

TSF 1303

Abstract: MAC-07
Contextual Info: EtherMap -3 Device Ethernet into STS-3/STM-1 SONET/SDH Mapper TXC-04226 DATA SHEET PRODUCT PREVIEW TELECOM BUS SIDE +1.8V +3.3V HO/LO RING Ports APPLICATIONS • • • • • HO/LO POH Ports SONET/SDH add/drop and terminal multiplexers Multi-service access platforms

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

M36DR432AD

Abstract: M36DR432BD
Contextual Info: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM

FM24C04A

Abstract: FM24C04A-S FM24C64
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

68HC11

Abstract: FM25C040U FM25C040UE FM25C040UV M08A MTC08 xxxxbp
Contextual Info: FM25C040U 4K-Bit SPI Interface Serial CMOS EEPROM General Description Functions The FM25C040U is a 4K 4,096 bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control data transfer between the

FM25C040ULEM8

Contextual Info: FM25C040U 4K-Bit SPI Interface Serial CMOS EEPROM General Description Functions The FM25C040U is a 4K 4,096 bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control data transfer between the

M68000

Abstract: MC68450 datasheet m68000 M6800 motorola M6800 diode A23 DOWNLOAD FLOPPY DISK DATASHEET FLOPPY DISK DATASHEET M68000-Based "Floppy Disk"
Contextual Info: D0-D15 A8-A23 A8/D0-A23/D15 D0-D15 AS MC68450 LDS REQ2 DMAC UDS R/W ACK2 DTACK PCL2 FC0-FC2 3 IRQ REQ3 ACK3 PCL3 AS MEMORY CS AS LDS UDS R/W DTACK FC0-FC2 ERROR AS IACK BEC0BEC2 DTC DONE D0-D15 DS R/W DTACK A1-A23 3 SYSTEM CONTROL IACK CS DECODE BERR HALT

AN1360

Abstract: AN1361 M58BW016D MPC555 MPC565 MPC56X
Contextual Info: AN1360 APPLICATION NOTE Connecting the MPC56x Spanish OAK Microcontroller to the M58BW016B/D Flash Memory CONTENTS • INTRODUCTION ■ POWER SUPPLY MANAGEMENT ■ BUS ARCHITECTURE ■ BUS OPERATIONS and TIMINGS ■ CONCLUSION ■ APPENDIX A. REGISTERS CONFIGURATION

IS29F010-70PL

Contextual Info: IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y Oc t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

code lock circuit flow chart

Abstract: M28W320ECB M28W320ECT M28W320
Contextual Info: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

JESD97

Abstract: M28W320FCB M28W320FCT
Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns

M36W216

Abstract: M36W216B M36W216T
Contextual Info: M36W216T M36W216B 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 2 Mbit (128K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■

M59MR032C

Abstract: M59MR032D w849 ADQ14
Contextual Info: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ

Contextual Info: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

IS29F010-70PL

Abstract: IS29F010
Contextual Info: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: M59DR032EA M59DR032EB 32 Mbit 2Mb x 16, Dual Bank, Page 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read Figure 1. Packages – VPP = 12V for fast Program (optional)