A7A10 Search Results

SMV512K32-SP

Contextual Info: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

B9535

Abstract: 1M16
Contextual Info: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%

MT46V2M32

Contextual Info: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP

Contextual Info: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

B17C

Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
Contextual Info: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051

MC6829CL

Abstract: m6809
Contextual Info: M O TO R O LA Advance Information HMOS MEMORY MANAGEMENT UNIT HIGH DENSITY N-CHANNEL, SILICON-GATEI The principle function of the MC6829 Memory Management Unit (MMU is to expand the address space of the MC6809from 64K bytes to a maximum of 2 Megabytes. Each MMU is capable o f handling four d if­

H1111

Abstract: SH7085 K4S641632H-TC75 PA12MD R5F7085 PA10 PA11
Contextual Info: APPLICATION NOTE SH7080 Group x16-Bit SDRAM Interface Introduction This application note describes how to connect and use an SDRAM ×16 bits . You can use this application note as reference information for designing user software. Target Device SH7085 (R5F7085)

128X14

Contextual Info: T D G l B ß l Q Q G 0 Q 4 Q 7bE S7E » SYNERGY SEMICONDUCTOR • Extremely fast access times: tcHCH = 5/6/7ns max. ■ Extended supply voltage option: The SY101492 is an extremely high-performance 2K x 9 SRAM. It is the first of a family of similar 9-bit wide SRAMs

Contextual Info: IS43/46LR32200B Preliminary Information 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

VT6526

Abstract: DM9161A FALC56 errata VT6526A VT6510B DIODE JS4 FALC56 application note FALC56 MPC8122 Oscilloscope USB 200Mhz Schematic
Contextual Info: MSC8122/26ADS Reference Manual MSC8122/26 Application Development System MSC812xADSRM Rev B.01, September 2006 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.

46LR16200C

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

MT46V2M32

Contextual Info: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP

Contextual Info: IS43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

46LR16200C

Abstract: Mobile DDR SDRAM 43LR16200C
Contextual Info: IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

Contextual Info: I S43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

B17C

Abstract: A5l102 48-7191 5241 kk A17a A18E AND501 A10E A17E PK-41661-001
Contextual Info: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051

W946432AD

Contextual Info: W946432AD 512K x 4 BANKS × 32 BITS DDR SDRAM GENERAL DESCRIPTION The W946432AD is a high-speed CMOS Double Data Rate synchronous dynamic random access memory organized as 512K words x 4 banks x 32 bits. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at

MS35059-23

Abstract: MS35059-22 MS35059 MS25068-23 MS35059-27 SPDT TOGGLE SWITCH 125VAC 6A MS25068-27 smd marking a60 MS35059-31 ms35059-21
Contextual Info: TOGGLE SWITCHES A SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE SEE TOGGLE SWITCH SELECTION GUIDE ON NEXT PAGE APEM, PO BOX 8288, HAVERHILL, MA USA 01835-0788 TOLL FREE: 877 246-7890 FAX: (781) 245-4531 E-mail: info@apem.com A1 TOGGLE SWITCHES A ESD PROTECTION

a7a10

Contextual Info: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP

W946432AD

Contextual Info: W946432AD 512K x 4 BANKS × 32 BITS DDR SDRAM GENERAL DESCRIPTION The W946432AD is a high-speed CMOS Double Data Rate synchronous dynamic random access memory organized as 512K words x 4 banks x 32 bits. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at