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    A70 8 PIN IC Search Results

    A70 8 PIN IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    A70 8 PIN IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 512K x 32 FLASH MODULE PUMA 68F16006/A-70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68F16006 is a high density 16Mbit CMOS 5V Only FLASH memory module in a


    Original     		PDF 68F16006/A-70/90/12/15 68F16006 16Mbit 150ns. JED-STD-020. 200pcs 183OC 225OC 219OC

    Untitled

    Abstract: No abstract text available
    Text: 512K x 32 FLASH MODULE PUMA 68F16006/A-70/90/12/15 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68F16006 is a high density 16Mbit CMOS 5V Only FLASH memory module in a


    Original     		PDF 68F16006/A-70/90/12/15 68F16006 16Mbit 150ns. JED-STD-020. 200pcs 183OC 225OC 219OC

    68F4006

    Abstract: No abstract text available
    Text: 128K x 32 FLASH MODULE PUMA 68F4006/A-70/90/15 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The PUMA 68F4006 is a 4Mbit CMOS 5V Only FLASH memory in a JEDEC 68 pin surface mount PLCC, with read access times of 70, 90, and


    Original     		PDF 68F4006/A-70/90/15 68F4006 120ns. 24hrs 120secs 120-180secs 10-40secs

    Untitled

    Abstract: No abstract text available
    Text: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V16AD641 16M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V16AD641 is a 16,777,216 words by 64 bits virtual channel synchronous dynam ic RAM module on which


    OCR Scan     		PDF MC-45V16AD641 16M-WORD 64-BIT MC-45V16AD641 uPD4565821

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AB641KS 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM D e scriptio n The M C -45V 8A B 641 KS is an 8 ,3 8 8 ,6 0 8 w o rd s by 64 bits virtu a l ch a n n e l syn ch ro n o u s d yn a m ic RAM m odule (sm all


    OCR Scan     		PDF MC-45V8AB641KS 64-BIT MC-45V8AB641KS uPD4565821

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD641KS 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM D e scriptio n The M C -45V 8A D 641 KS is a 8 ,3 8 8 ,6 0 8 w o rd s by 64 bits virtu a l ch a n n e l syn ch ro n o u s d yn a m ic RAM m odule (sm all


    OCR Scan     		PDF MC-45V8AD641KS 64-BIT MC-45V8AD641KS uPD4565161

    IC MARKING A60

    Abstract: 7KD MARKING marking B44
    Text: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM


    OCR Scan     		PDF b42752S 00421flb uPD42S16400L uPD42S17400L PD42S16400L PD42S17400L //PD42S16400L) b427525 004EbBL> 475mil) IC MARKING A60 7KD MARKING marking B44

    LA80P

    Abstract: marking 80L
    Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its


    OCR Scan     		PDF b427525 uPD42S16180L uPD42S17180L uPD42S18170L 475mil) P32VF-100-475A P32VF-100-475A LA80P marking 80L

    PD42S

    Abstract: No abstract text available
    Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s


    OCR Scan     		PDF b427525 uPD42S16190L uPD42S17190L uPD42S18190L b427525 0042bE 475mil) P32VF-100-475A P32VF-100-475A PD42S

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY 8 M 1M x 8/512 K x 16 BIT CMOS MBM29 DL800TA-70 - /M B M29 DL800BA-70/-90 -12 90/-1 2 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Sim ultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF MBM29 DL800TA-70 DL800BA-70/-90 MBM29LV800TA/BA) 48-pin 48-ball 48030S OOTA-70/-90/-12/M L800B

    Untitled

    Abstract: No abstract text available
    Text: 128K x 32 FLASH MODULE mosaic semiconductor, inc. PUMA 68F4006/A-70/90/15 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 4.2 : November 1998 Fax No: (619) 674 2230 Description The PUMA 68F4006 is a 4Mbit CMOS 5V Only


    OCR Scan     		PDF 68F4006/A-70/90/15 68F4006 120ns. 24hrs 120secs 120-180secs 10-40secs

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY B lB 8 M 1 M X 8 /5 1 2 K X 1 6 B IT MBM29DL300TA-?om-i!/MBM29DL800BA-70/-90/-12


    OCR Scan     		PDF DS05-20860-3E MBM29DL300TA- /MBM29DL800BA-70/-90/-12 MBM29LV800TA/BA) 48-pin BenL800B BGA-48P-M12) B480012S-2C-2

    29DL800TA

    Abstract: 29DL800BA 29dl800b fujitsu 29dl800 29DL800BA -90
    Text: FLASH MEMORY 8M 1M x 8/512K x 16 BIT CMOS M BM29 DL800TA-70/-90/-12/M BM29 DL800BA-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF 8/512K DL800TA-70/-90/-12/M DL800BA-70/-90/-12 MBM29LV800TA/BA) 48-pin 48-ball F9811 29DL800TA 29DL800BA 29dl800b fujitsu 29dl800 29DL800BA -90

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e


    OCR Scan     		PDF MB81C1001A-60/-70/-80/-10 MB81C1001A DIP-18P-M04 MB81C1A-80 MB81C1001A-10 24-LEAD FPT-24P-M04) F24020S-2C MB81C1001A-60

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AD64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small


    OCR Scan     		PDF MC-45V8AD64S 64-BIT MC-45V8AD64S uPD4565161 sup64-71 64M-BIT

    TH3064

    Abstract: No abstract text available
    Text: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V8AB641 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V8AB641 is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module on which 8


    OCR Scan     		PDF MC-45V8AB641 64-BIT MC-45V8AB641 uPD4565821 TH3064

    a70 8 pin ic

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AB64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AB64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small


    OCR Scan     		PDF MC-45V8AB64S 64-BIT MC-45V8AB64S uPD4565821 sup71 64M-BIT 144-PIN a70 8 pin ic

    Untitled

    Abstract: No abstract text available
    Text: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N


    OCR Scan     		PDF b427525 PD42S16160L, PD42S17160L /zPD42S18160L P32VF-100-475A

    Untitled

    Abstract: No abstract text available
    Text: L Q G IQ L F 3347 High-Speed Image Filter with Coefficient RAM D E V IC E S IN C O R P O R A T E D TI0N_ □ 80 M H z D ata In p u t an d C o m p u ta­ tion Rate □ Four 12 x 12-bit M ultipliers w ith Individual D ata and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks


    OCR Scan     		PDF 12-bit 32-bit 16-bit 120-pin LF3347 LF3347GC25

    29lv800ta

    Abstract: 29DL800BA
    Text: FLASH MEMORY CMOS 8 M 1M x 8/512 K x 16 BIT M B M29 D L800TA-70/-90/-12 /M B M29 D L800B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program


    OCR Scan     		PDF L800TA-70/-90/-12 L800B MBM29LV800TA/BA) 48-pin 48-ball D-63303 F9904 29lv800ta 29DL800BA

    MSM5117400

    Abstract: MSM5117400A
    Text: O K I Sem iconductor MSM5 1 1 7 4 0 0 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5117400A_ 304-Word MSM5117400A 26/24-pin cycles/32 MSM5117400

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is


    OCR Scan     		PDF MSM51V16160A 576-Word 16-Bit MSM51V16160A 42-pin 50/44-pin

    MSM5116800A

    Abstract: No abstract text available
    Text: O K I Sem iconductor MSM5 1 1 6 8 0 0 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPT IO N The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5116800A_ 152-Word MSM5116800A 28-pin cycles/64

    D4242

    Abstract: IC 741 cn
    Text: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and


    OCR Scan     		PDF uPD42S16170L uPD42S17170L uPD42S18170L b427525 004EbBL> 475mil) P32VF-100-475A P32VF-100-475A D4242 IC 741 cn