A41N Search Results

A76 SMD

Abstract: ad38 SMD G5001 bracket A93 SMD B49 diode smd B45 diode smd JT-100-1 b45 smd diode A86 SMD A79 SMD
Contextual Info: LXD1000 NIC Demo Board for Gigabit Ethernet Applications Development Kit Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD1000 NIC Demo Board for Gigabit Ethernet Applications User Guide. Order Number: 249245-001

Contextual Info: Features • • • • • • • • • • • Single 3.3V ± 1 0 % Supply 3-Volt-Only Read and Write Operation Hardware and Software Data Protection Low Power Dissipation - 15 mA Active Current - 20 i*A CMOS Standby Current Fast Read Access Time - 200 ns

Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks

A41N

Abstract: TIONA 595 Atmel 0541
Contextual Info: Features • Fast Read Access Time -150 ns • Fast Byte Write - 200 ps or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING - READY/BUSY Open Drain Output

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

Mullard

Abstract: oscillograph A41-G4 cathode ray A41B
Contextual Info: S J , , . A4I-G4/B4/N4 CATHODE RAY TUBE FOR OSCILLOGRAPHIC USE 4 - Inch screen Heater 4.0 V 1.0 A Vf If Capaoities 7 . 5 U UF Cg 2.6 uuF CD1D1' CD2D2' 2.8 uu? Fluorescent colour - A41-G4 - Green " " A41-B4 - Blue " " A41-N4 - Green - Long Persistence. Defleotion - Double electrostatic for asymmetrical

660S

Contextual Info: Features ¿lmËL • Fast Read Access Time -150 ns • Fast Byte Write - 200 [is or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING