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    GP 841 Diode

    Abstract: FH2114 A3012
    Text: FH2114 RF Power MOSFET Transistor 75W, 30-90MHz, 24V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012711 Designed for frequency hopping systems 30-90 MHz


    Original     		PDF FH2114 30-90MHz, A3012711 GP 841 Diode FH2114 A3012

    12J60

    Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
    Text: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF FH2114 A3012711 VOS-30 12J60 a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I

    t750

    Abstract: ds 300 u810
    Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration


    OCR Scan     		PDF A3012711 FH2114 t750 ds 300 u810