BX R435
Abstract: bx r433 74hct05 A53 SMD 75C185 D9PRS CRYSTAL 14.318MHZ 2N7002-SOT23 SMD SOT23 a41 ABB cp50
Text: A B C VCC_CORE D +3.3V E +3.3V +3.3V E13 R15 A17 4 3 BG#0/HAHOLD 3 BR#0/HLOCK# 3 TS#/HADS# 3 XATS#/HBE#3 3 3 3 A0/HBE#5 A1/HBE#6 A2/HBE#7 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 M1 K13 L1
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AP60X3
AP60X2
AP60X1
AP60X0
DRTRY60X#
UltraDMA/33
10/100M-bit
WB553F
CS4236B
ECO77)
BX R435
bx r433
74hct05
A53 SMD
75C185
D9PRS
CRYSTAL 14.318MHZ
2N7002-SOT23
SMD SOT23 a41
ABB cp50
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xc5202pc84
Abstract: XC5202-PC84 XC4003APC84 XC4010PC84 XC5204PC84 XC4003PC84 xc5210pc84 XC5204-PC84 XC5210PC XC4005PC84
Text: 84-Pin PLCC XC4000/XC5200 Common Footprint A16 O A17(O) GND 12 GCK1 13 TMS(I) I/O 9 8 7 6 5 4 3 AAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAAAAAAAAAAAA AA AA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAAAAAA
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84-Pin
XC4000/XC5200
XC4000
XC5200
xc5202pc84
XC5202-PC84
XC4003APC84
XC4010PC84
XC5204PC84
XC4003PC84
xc5210pc84
XC5204-PC84
XC5210PC
XC4005PC84
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XC4005
Abstract: xilinx xc5204 XC4002A XC4003A XC4004A XC4005A
Text: 84-Pin PLCC XC4000/XC5200 Common Footprint A16 O A17(O) GND 12 GCK1 13 TMS(I) I/O 9 8 7 6 5 4 3 AAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAAAAAAAAAAAA AA AA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAAAAAA
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84-Pin
XC4000/XC5200
XC4000
XC5200
XC4005
xilinx xc5204
XC4002A
XC4003A
XC4004A
XC4005A
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32-PIN
Abstract: DS1249Y
Text: DS1249Y DS1249Y 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • JEDEC standard 32–pin DIP package
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DS1249Y
2048K
DS1249Y
32-PIN
32-PIN
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Untitled
Abstract: No abstract text available
Text: HM628511HI Series Ordering Information Type No. Access time Package HM628511HJPI-12 HM628511HJPI-15 12 ns 15 ns 400-mil 36-pin plastic SOJ CP-36D Pin Arrangement HM628511HJPI Series A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CS 6 31 OE I/O1
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HM628511HI
HM628511HJPI-12
HM628511HJPI-15
400-mil
36-pin
CP-36D)
HM628511HJPI
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36-PIN
Abstract: No abstract text available
Text: HM62W8511HI Series Ordering Information Type No. Access time Package HM62W8511HJPI-15 15 ns 400-mil 36-pin plastic SOJ CP-36D Pin Arrangement HM62W8511HJPI Series A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CS 6 31 OE I/O1 7 30 I/O8 I/O2 8
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HM62W8511HI
HM62W8511HJPI-15
400-mil
36-pin
CP-36D)
HM62W8511HJPI
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DS1249AB
Abstract: DS1249Y
Text: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27
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DS1249Y/AB
2048K
DS1249Y)
DS1249Y/AB
DS1249AB
DS1249Y
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static ram 2048K 70 ns
Abstract: DS1249AB DS1249Y
Text: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27
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DS1249Y/AB
2048K
DS1249Y)
DS1249Y/AB
static ram 2048K 70 ns
DS1249AB
DS1249Y
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CSR application
Abstract: CSR-4 Transistor z1 LH28F004SU-Z1 LH28F008SA CSR34
Text: LH28F004SU-Z1 FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 100 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7
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LH28F004SU-Z1
40-PIN
J63428
SMT96109
CSR application
CSR-4
Transistor z1
LH28F004SU-Z1
LH28F008SA
CSR34
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LH28F008SC
Abstract: 28F008SA 42-PIN 44-PIN
Text: LH28F008SC FEATURES 8M 1M x 8 Flash Memory 42-PIN CSP TOP VIEW • High-Density Symmetrically-Blocked Architecture – Sixteen 64K Erasable Blocks • High-Performance 1 2 3 4 5 6 7 A A5 A8 A11 VPP A12 A15 A17 B A4 A7 A10 VCC A13 NC A18 C A6 A9 RP CE A14
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LH28F008SC
42-PIN
J63428
SMT96114
LH28F008SC
28F008SA
44-PIN
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NC80
Abstract: LH28F004SU-NC LH28F008SA 0C000
Text: LH28F004SU-NC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 80 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7
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LH28F004SU-NC
40-PIN
J63428
SMT96119
NC80
LH28F004SU-NC
LH28F008SA
0C000
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DS1650
Abstract: DS1650Y DS1650AB DS1650Y-100
Text: DS1650Y/AB DS1650Y/AB Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 • Low–power CMOS A3 9 24 OE
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DS1650Y/AB
4096K
DS1650Y/AB
DS1650
DS1650Y
DS1650AB
DS1650Y-100
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34-pin
Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns
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DS1250Y/AB
4096K
DS1250AB)
DS1250Y/AB
34-PIN
DS34PIN
32-PIN
DS1250
DS1250AB
DS1250Y
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DS1250
Abstract: DS1250W DS9034PC
Text: DS1250W PRELIMINARY DS1250W 3.3V 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 150 ns
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DS1250W
4096K
DS1250
DS1250W
DS9034PC
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A64S16161
Abstract: AMIC TECHNOLOGY 256X16 ASCEND VCC
Text: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12
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A64S16161
A64S16161
AMIC TECHNOLOGY
256X16
ASCEND VCC
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Untitled
Abstract: No abstract text available
Text: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12
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A64S16161
A64S16161G-70I
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Untitled
Abstract: No abstract text available
Text: A64S06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Features ● Memory cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12
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A64S06161
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34-pin
Abstract: DS1250 DS1250AB DS1250Y DS9034PC 4267B
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 70 ns
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DS1250Y/AB
4096K
34-pin
DS1250
DS1250AB
DS1250Y
DS9034PC
4267B
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DS1250
Abstract: DS1250AB DS1250Y DS9034PC
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 70 ns
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DS1250Y/AB
4096K
DS1250
DS1250AB
DS1250Y
DS9034PC
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Untitled
Abstract: No abstract text available
Text: WHITE MICROELECTRONICS 256Kx4 SRAM WPS256K4-XRJX PRELIMINARY# PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN CONFIGURATION TOP VIEW NCC 1 A3 [ I 2 A2 C 3 A ir 4 AOC 5 S5C 6 i/oí C 7 vccC 8 v ss C 9 1/02 d 10 W E □ 11 A17 m 12 A 1 6 d 13 A 1 5 C 14
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OCR Scan
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PDF
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256Kx4
WPS256K4-XRJX
256Kx
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Untitled
Abstract: No abstract text available
Text: TT WPS512K8-XRJX M/HITE /M ICRO ELECTRONICS 512Kx8 SRAM PRELIMINARY * PLASTIC PLUS FEATURES • Access Tim es of 15. 20, 25ns PIN CONFIGURATION TOP VIEW AO [ I 1 ^ 35 □ A18 A2T 3 34 □ A17 A3 [Z 4 33 □ A16 A4 □ 5 32 □ A15 CSE 6 7 30 □ 1/01 c
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OCR Scan
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WPS512K8-XRJX
512Kx8
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Untitled
Abstract: No abstract text available
Text: TT WHITE MICROELECTRONICS 2 5 6 K x 16 S R A M WPS256K16-XUX p r b jm in a r y * PLASTIC PLUS FEATURES PIN CONFIGURATION TOP VIEW AO c 1 44 □ A17 A1 c 2 43 □ A16 A2 c 3 42 □ 41 □ A15 40 □ LJB 39 □ LB A3 c 4 A4 c 5 CS c 6 1/01 c 7 38 I/02 c 8
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OCR Scan
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PDF
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WPS256K16-XUX
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Untitled
Abstract: No abstract text available
Text: JUP 8 6 1992 molaic 1M X 8 SRAM MS81000RKXA-85/10/12 Issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. Pin Definition 1,048,576 x 8 CMOS High Speed Static RAM vcc A0 A1 A2 A3 DO D1 A4 AS A6 A7 A8 A13 02 CS A1S A16 A17 A9 GND OE
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MS81000RKXA-85/10/12
140mW
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DS1270
Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
Text: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1
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DS1270Y/AB
DS1270Y)
DS1270AB)
36-pin
DS1270Y/AB
36-PIN
DS1270
DS1270AB
DS1270AB-70
DS1270Y
DS1270Y-70
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