A1680 TRANSISTOR Search Results

A1680 TRANSISTOR Datasheets Context Search

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Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408.	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR A1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680	PDF
transistor A1680 Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. transistor A1680 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680	PDF
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408.	PDF
transistor A1680 Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR	PDF