A14A9 Search Results

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

Contextual Info: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

Contextual Info: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

IDT72V36106

Abstract: IDT72V3686 IDT72V3696
Contextual Info: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 FEATURES • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2

lm814

Abstract: C1948
Contextual Info: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Contextual Info: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2, 32,768 x 36 x 2, 65,536 x 36 x 2 FEATURES: • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2 IDT72V36106 – 65,536 x 36 x 2

K4C89183AF

Contextual Info: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

IDT72V3696

Abstract: IDT72V36106 IDT72V3686
Contextual Info: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2

Contextual Info: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.4 - 1 - REV. 0.4 Jul. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

Contextual Info: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M

Contextual Info: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM

Contextual Info: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

lm814

Abstract: cyble thelia TC59 A14A9
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

95c063

Abstract: PA7F TMP95C063F TMP95C063 ti8c INTET45 B2W24-0 LRD 22
Contextual Info: TO SHIBA TMP95C063 CMOS 16-Bit Microcontroller TMP95C063F 1. Outline and Features TMP95C063F was developed as a high-speed, advanced 16-bit microcontroller for a range of mid- to large-scale equipment. TMP95C063F is presented in a 144-pin plastic flat package. Its features are as

Contextual Info: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2

Contextual Info: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

K4C89183AF

Contextual Info: Preliminary K4C89183AF 288Mb x18 Network-DRAM-II Specification Version 0.5 - 1 - REV. 0.5 Aug. 2004 Preliminary K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo

IDT72V3693

Abstract: IDT72V36103 IDT72V3623 IDT72V3683
Contextual Info: 3.3 VOLT CMOS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 32,768 x 36 65,536 x 36 • • • FEATURES • • • • • • • Memory storage capacity: IDT72V3683 – 16,384 x 36 IDT72V3693 – 32,768 x 36 IDT72V36103 – 65,536 x 36 Clock frequencies up to 100 MHz 6.5 ns access time

Contextual Info: 3.3 VOLT CMOS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 32,768 x 36 65,536 x 36 FEATURES • • • • • • • • • • Memory storage capacity: IDT72V3683 – 16,384 x 36 IDT72V3693 – 32,768 x 36 IDT72V36103 – 65,536 x 36 Clock frequencies up to 100 MHz 6.5 ns access time

Contextual Info: 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2 IDT72V3684 32,768 x 36 x 2 IDT72V3694 65,536 x 36 x 2 IDT72V36104 • FEATURES • • • • • • • Memory storage capacity: IDT72V3684 – 16,384 x 36 x 2 IDT72V3694 – 32,768 x 36 x 2 IDT72V36104 – 65,536 x 36 x 2

Contextual Info: K4C89363AF Network-DRAM-II Specification Version 0.0 - 1 - REV. 0.0 Nov. 2002 K4C89363AF Revision History Version 0.0 Nov. 2002 - First Release - 2 - REV. 0.0 Nov. 2002 K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM DESCRIPTION

Contextual Info: K4C89093AF 288Mb Network-DRAM-II Specification Version 0.6 - 1 - REV. 0.6 Jan. 2005 K4C89093AF Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc. - Changed capacitance of ADDR/CMD/CLK