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    A1015 GR Search Results

    A1015 GR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UE36A10152000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, GXT plating Visit Amphenol Communications Solutions
    UE36A10153000T Amphenol Communications Solutions 56G QSFP-DD single SMT connector, Gold plating Visit Amphenol Communications Solutions
    TPS7A1015PDSER Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PYKAR Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 5-DSBGA -40 to 125 Visit Texas Instruments Buy
    TPS7A1015PDSET Texas Instruments 300-mA low-IQ ultra-low-dropout (LDO) (70 mV at 300 mA) linear regulator 6-WSON -40 to 125 Visit Texas Instruments Buy
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    A1015 GR Price and Stock

    Rochester Electronics LLC KSA1015GRTA-ON

    TRANS PNP 50V 0.15A TO-92-3
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    DigiKey KSA1015GRTA-ON Bulk 17,762 8,876
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    Rochester Electronics LLC KSA1015GRTA

    TRANS PNP 50V 0.15A TO-92-3
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    DigiKey KSA1015GRTA Bulk 11,820 11,820
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    onsemi KSA1015GRBU

    TRANS PNP 50V 0.15A TO-92-3
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    FLIP ELECTRONICS KSA1015GRTA

    TRANS PNP 50V 0.15A TO-92-3
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    DigiKey KSA1015GRTA Bulk 22,000
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    onsemi KSA1015GRTA

    TRANS PNP 50V 0.15A TO-92-3
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    DigiKey KSA1015GRTA Ammo Pack
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    Rochester Electronics KSA1015GRTA 17,762 1
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    EBV Elektronik KSA1015GRTA 143 Weeks 2,000
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    Flip Electronics KSA1015GRTA 22,000
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    A1015 GR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A1015 transistor

    Abstract: transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015
    Text: TO-92 Plastic-Encapsulate Transistors PNP A1015 A1015 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


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    A1015 -100mA, -10mA 30MHz A1015 transistor transistor A1015 br a1015 Transistor TO-92 A1015 transistor A1015 GR A1015 A1015 PNP TRANSISTOR A1015 gr A1015 y pnp a1015 PDF

    transistor A1015 GR

    Abstract: br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR
    Text: A1015 A1015 TRANSISTOR PNP TO-92 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM: 0.4 W (Tamb=25℃) Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    A1015 -100mA, -10mA 30MHz transistor A1015 GR br a1015 transistor A1015 a1015 transistor A1015 A1015 gr A1015 Y Transistor TO-92 A1015 A1015 equivalent A1015 PNP TRANSISTOR PDF

    A1015 gr

    Abstract: transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO 3.BASE Value Units


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    A1015 -100mA, -10mA 30MHz A1015 gr transistor A1015 GR A1015 transistor A1015 a1015 transistor Transistor TO-92 A1015 A1015 y A1015 PNP TRANSISTOR A1015 TO92 equivalent transistor A1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR( PNP ) TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage


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    A1015 30MHz 270TYP 050TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


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    A1015 -100mA, -10mA 30MHz PDF

    a1015 transistor

    Abstract: transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015
    Text: A1015 Transistor PNP TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage


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    A1015 -100A, -100mA, -10mA 30MHz a1015 transistor transistor A1015 GR transistor A1015 A1015 PNP TRANSISTOR a1015 A1015 gr Transistor TO-92 A1015 transistor pnp a1015 a1015 TRANSISTOR pnp br a1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1015 0.4 W, -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 1.27 Typ. Power Dissipation 1: Emitter 2: Collector 3: Base 1.25±0.2 14.3±0.2


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    A1015 -100mA, -10mA 30MHz 01-June-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO Parameter Value Units


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    A1015 -100mA, -10mA 30MHz PDF

    A1015 sot-23

    Abstract: No abstract text available
    Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch


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    OT-23 OD-123+ FM120-M A1015 FM1200-M OT-23 OD-123H FM120-MH FM130-MH FM140-MH A1015 sot-23 PDF

    a1015 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR PNP TO-92 1.EMITTER FEATURES z Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO


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    A1015 -100mA, -10mA 30MHz a1015 transistor PDF

    sa1015

    Abstract: A1015 gr A1015 GSA1015 GSC1815
    Text: CORPORATION G S A1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B P NP E PITAX I AL P L ANAR TANSI STOR Description The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Collector-Base Voltage: VCBO =-50V


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    A1015 2004/11/29B GSA1015 GSC1815 sa1015 A1015 gr A1015 GSC1815 PDF

    A1015 gr

    Abstract: A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp
    Text: A1015 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage


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    A1015 30MHz 14-Feb-06 270TYP A1015 gr A1015 y transistor A1015 A1015 A1015 TO92 A1015 equivalent br a1015 A1015 DATASHEET A1015 gr W A1015-pnp PDF

    A1015

    Abstract: A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92
    Text: Hcmam TO-92 Piasti A1015 Encapsulate Transistors TO-92 TRANSISTOR P N P FEATURES Power dissipation 1,EMITTER P CM • 0,4 Collecto cu ent W (Tamb=25’’C> 2.COLLECTOR lCM : -0.15 A Collecto -base voltage 3.BASE 1 2 3 • -50 V Ope ating and storage junction temperature range


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    A1015 A1015 gr A1015 Y transistor A1015 GR transistor a1015 br a1015 a1015 transistor A1015 PNP TRANSISTOR A1015 TO92 PDF

    A1015

    Abstract: A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR
    Text: A1015 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :-0.15 A Collector-base voltage V (BR)CBO :-50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    A1015 A1015 A1015 equivalent transistor A1015 GR transistor A1015 A1015 y A1015 y equivalent a1015 transistor A1015 PNP TRANSISTOR pnp transistor a1015 A1015 GR PDF

    A1015 gr 331

    Abstract: IR3Y26 LA7605 LA7642N LA7605-LCD s1815 LA7605N 27k 3kv tl1451 A1015 gr
    Text: 2 3 +12 152 R76 4.7K 4.7K R79 4.3V 1U E23 E29 273 NC KRF FOF 4.43M IDF 4.0F R-Y 470U/25V Vin 3 Vout GND 102 E42 220U/16V 220U/16V SPK C32 104 R110 CHROMA 472 101 R63 3 103 221 C46 1U R29 SP1 E53 2 EOU VCC NC 19 20 18 VI 17 KILL 16 4.43 SYS 15 SAND 1 CON2 AUDIO


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    470U/25V 220U/16V 2SC1815 \LA7605-LCD A1015 gr 331 IR3Y26 LA7605 LA7642N LA7605-LCD s1815 LA7605N 27k 3kv tl1451 A1015 gr PDF

    A1015

    Abstract: transistor A1015 diagram WJA1015 JESD22-A114 WJA1000 WJA1015-PCB 3016 sot
    Text: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


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    WJA1015 900MHz OT-89 WJA1015 1-800-WJ1-4401 A1015 transistor A1015 diagram JESD22-A114 WJA1000 WJA1015-PCB 3016 sot PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA


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    KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA PDF

    Untitled

    Abstract: No abstract text available
    Text: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


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    WJA1015 WJA1015 OT-89 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 2300 MHz 15 dB Gain +17 dBm P1dB +37 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package


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    WJA1015 900MHz OT-89 WJA1015 1-800-WJ1-4401 PDF

    A1015 gr

    Abstract: Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W
    Text: Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.


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    C306A3-T BTA1015A3 BTA1015A3 -150mA BTC1815A3. UL94V-0 A1015 gr Transistor TO-92 A1015 A1015 A1015 TO92 A10153 pnp transistor a1015 transistor A1015 A1015 equivalent A1015 gr W datasheet A1015 gr W PDF

    74LS688

    Abstract: s1d13502 isa bus 74LS00 DATA AB-019
    Text: S5U13502 Dot Matrix Graphics LCD Controller ISA Bus Interface Considerations Document Number: X16-AN-003-06 Copyright 1995, 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    S5U13502 X16-AN-003-06 1100000000b 1100000001b MC68K 16-bit S1D13502 74LS688 s1d13502 isa bus 74LS00 DATA AB-019 PDF

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


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    OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent PDF

    BTS 3900

    Abstract: A1015 transistor A1015 diagram JESD22-A114 WJA1015 WJA1015-PCB mmic amplifier marking code 414 bts 2140
    Text: WJA1015 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • 50 – 4000 MHz 14 dB Gain +19.5 dBm P1dB +35.5 dBm OIP3 +5V Single Voltage Supply Internal Active Bias Supply Internally matched to 50 Ω Lead-free / RoHS-compliant /


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    WJA1015 OT-89 WJA1015 1-800-WJ1-4401 BTS 3900 A1015 transistor A1015 diagram JESD22-A114 WJA1015-PCB mmic amplifier marking code 414 bts 2140 PDF

    28C17

    Abstract: No abstract text available
    Text: SGS-THOMSON M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max


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    M28C17 PDIP28 M28C17 28C17 PDF