Untitled
Abstract: No abstract text available
Text: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •MIL-STD-883 FEATURES • Ultra High Speed Asynchronous Operation
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AS5C512K8
36-Pin
MIL-STD-883
compatibl60004MMA
5962-9560008MMA
5962-9560014MMA
5962-9560013MMA
AS5C512K8F-45/883C
AS5C512K8F-45L/883C
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Untitled
Abstract: No abstract text available
Text: M27W401 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ ■ Pin Compatible with M27C4001 1 Programming Time 100 µs/byte
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M27W401
512Kb
M27C4001
FDIP32W
PDIP32
PLCC32
TSOP32
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Untitled
Abstract: No abstract text available
Text: EEPROM AS8E512K8 512K x 8 EEPROM PIN ASSIGNMENT EEPROM Module Top View AVAILABLE AS MILITARY SPECIFICATIONS • • 32-Pin DIP & 32-Pin SOJ (CW) SMD 5962-93091 MIL-STD-883 FEATURES • • • • • • • • Access times of 150, 200, 250, and 300 ns
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AS8E512K8
MIL-STD-883
32-Pin
512Kx8
150ns
200ns
250ns
300ns
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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IS61WV51232BLL-10BLI
Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater
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IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
IS61WV51232Axx)
IS61/64WV51232Bxx)
90-ball
IS61WV51232BLL-10BI
IS61WV51232BLL-10BLI
IS61WV51232BLL-10BLI
IS61WV51232BLL
IS64WV51232BLL
IS61WV51232
IS64WV51232BLL-10BA3
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IS61C5128AL
Abstract: IS61C5128AS-25QLI IS61C5128AL-10KLI IS61C5128AL-10TLI IS61C5128AS-25TLI 64C5128AS
Text: IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64C5128AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS)
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IS61C5128AL/AS
IS64C5128AL/AS
IS61/64C5128AL)
IS61/64C5128AS)
36-pin
400-mil)
32-pin
32-pin
44-pin
32pin
IS61C5128AL
IS61C5128AS-25QLI
IS61C5128AL-10KLI
IS61C5128AL-10TLI
IS61C5128AS-25TLI
64C5128AS
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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BGA-48-0608
Abstract: BH616UV8011
Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns
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BH616UV8011
x8/x16
R0201-BH616UV8011
TSOP1-48
BGA-48-0608
BH616UV8011
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Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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lv8011
Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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1265E
01/00/xM
lv8011
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
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M68Z512W
Abstract: No abstract text available
Text: M68Z512W 4 Mbit 512 Kbit x 8 LOW VOLTAGE, LOW POWER SRAM WITH OUTPUT ENABLE FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. 32-pin TSOP Package – 400nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 2.7 TO 3.6V ■ 512 Kbit x 8 SRAM WITH OUTPUT ENABLE
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M68Z512W
32-pin
400nA
M68Z512W
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Untitled
Abstract: No abstract text available
Text: UM23L4101 PRELIMINARY 524,288 X 8 BIT LOW VOLTAGE CMOS MASK ROM Features • ■ ■ ■ 524,288 x 8-bit organization Single +3V power supply Access time: 250 ns max. Current: Operating: 15mA (max.) Standby: 10 ¿¿A (max.) ■ Three-state outputs for wired-OR expansion
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UM23L4101
32-pin
UM23L4101
UM23L4101M
UM23L4101H
32LDIP
32LSOP
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Untitled
Abstract: No abstract text available
Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte
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TMS28F040
304-BIT
SMJS040-DECEMBER
A0-A18
32-pin
40-pin
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27c040-12
Abstract: No abstract text available
Text: SMJ27C040 524288 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046B - NOVEMBER 1992 - REVISED SEPTEMBER 1997 Organization . . . 524288 by 8 Bits Single 5-V Power Supply Industry Standard 32-Pin Dual-In-line Package All Inputs/Outputs Fully TTL Compatible
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SMJ27C040
SGMS046B
32-Pin
27C040-10
27C040-12
27C040-15
400-mV
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Untitled
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
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SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
A18A17
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AMD Series D flash memory card
Abstract: No abstract text available
Text: AMDËI AmCOOXCFLKA 1,2, or 4 Megabyte 5.0 Volt-only “C-Series” Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance — 150 ns maximum access time ■ Single supply operation — 5.0 V ± 5% for read, write and erase ■ CMOS low power consumption
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68-pin
AMD Series D flash memory card
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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xxxxw
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed
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OCR Scan
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Am27X800
8-Bit/524
16-Bit)
KS000010
7347A-9
xxxxw
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV004
20510D
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AMD 27C040
Abstract: 27c040
Text: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption
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Am27C040
28-pin
32-pin
27C040
KS000010
14971C-9
AMD 27C040
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Untitled
Abstract: No abstract text available
Text: a PRELIMINARY Am27C800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit ROM Compatible CMOS EPROM_ DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — 120 ns ■ ±10% power supply tolerance standard on
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Am27C800
8-Bit/524
16-Bit)
42-pin
44-pin
KS000010
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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29f800bb
Abstract: 29F800BT 29F800B 29F800BT-70 29F800BT-90 29F800BB-70 M29F800B 29f800bb55
Text: AMD£I Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F800B
8-Bit/512
16-Bit)
Am29F800
32pecifications
A18-A12.
29f800bb
29F800BT
29F800B
29F800BT-70
29F800BT-90
29F800BB-70
M29F800B
29f800bb55
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