A0603 Search Results

Contextual Info: UPI A0603 SERIES ULTRA HIGH CURRENT SMT POWER INDUCTOR. Applications : ．PDA/Notebook/Desktop, and server applications. ．DC/DC converters in distributed power systems. ．DC/DC converter for Field Programmable Gate Array FPGA . Shape and Dimensions (Dimensions are in mm):

IDT70V28L20PFGI

Abstract: IDT72V36110L7-5PFG idt5t93gl161pfi IDT7024L35PFI IDT7024L15PFGI IDT71321LA20PFG IDT71V321L55TFG IDT72V36110L15PFG IDT70V22L20PF IDT70V25L25PFGI
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0603-04 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 5/8/2006 TQFP and PQFP Products (See attached affected part # list)

RD07MUS2B

Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

GRM1882C1H100JA01D

Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V

RD07MUS2B

Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V

Contextual Info: Thin Film Surface Mount Chip Attenuators The ims A-Series thin film surface mount chip attenuator line is ideal for applications requiring precision attenuation in a small form factor packages. The attenuators are provided in the “π” configuration. Thin

Contextual Info: Rev: 031008 Ge ne ra l De sc ript ion The DS33X162 demo kit DK is an easy-to-use evaluation board for the DS33X162 Ethernet-overPDH device. The demo kit contains an option for either T3/E3 or T1/E1 serial links. All serial links are complete with line interface, transformers, and

IMS1141

Abstract: A-0402WA IMS2533 0402WA A-0603 IMS-1141 ims 100mW attenuators
Contextual Info: Thin Film Surface Mount Chip Attenuators The ims A-Series thin film surfac f e mount chip attenuator line is ideal for applications requiring precision attenuation in a small form factor packages. The attenuators are provided in the “π” configuration. Thin

Contextual Info: CL6 Linear, Fixed, 100mA, Constant Current LED Driver Features General Description ► ► ► ► ► ► The CL6 is a fixed, linear current regulator designed for driving high brightness LEDs at 100mA from nominal 12V, 24V, or 48V supplies. With a maximum rating of 90V, it is

TC227

Abstract: IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729
Contextual Info: Model: R15B R:0 Intel Banias+855PM+ICH4 PCB STACK UP LAY1 TOP LAY2 GND LAY3 IN1 LAY4 IN2 LAYS GND1 LAY6 VCC LAY7 IN3 LAY8 IN4 LAY9 GND2 LAY10 BOTTOM Revision History A Page Page Page Page Page Page Page Page Page Page Page ORIGINAL RELEASE 1 2 3 4 5 6 7 8

IMS-1141

Contextual Info: Thin Film Surface Mount Chip Attenuators The ims A-Series thin film surface mount chip attenuator line is ideal for applications requiring precision attenuation in a small form factor packages. The attenuators are provided in the “π” configuration. Thin

GRM2162C1H180JZ01D

Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V

gp 722

Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout

RCI-0603

Abstract: rci-2512 rci-0805 rci-1206 RCD-0302PW RCC-0402PW IMS 0805 0402-J RCI-0402 RC-I-2512
Contextual Info: Thick and Thin Film Engineering Kits IMS’ engineering kits are designed to provide engineers and designers with all of the basic values needed to build prototypes and pilot runs of new designs. This page covers all of the most popular IMS kits. However, kits are available for almost any IMS product. If you don’t see a kit that fits your

Contextual Info: ULTRA HIGH CURRENT SMT POWER INDUCTORS UPIA 0603 TYPE B Shape and size: Dimensions are in mm H G L Series A(max) B(max) C(max) UPIA 0603 7.8 7.0 3.2 Features: D 1.6±0.3 E G H L By each P/N 3.7 3.5 8.0 Ordering information: ．Lowest height and DCR in this package footprint.

Contextual Info: REVISIONS ECN, ERN NO. SYM ZONE .621 [15.77] . LED 2 A .175 [4.45] TYP. 2 1 7 [5.51] TYP. GREEN P U R E-T IN DIPPED ZONE 5 1 7 [13.13] 10 Oft J - K 12 I .620 [15.75] T Y P .-|* DATE APPRO. APf&s/ae LCHAN PRO PO SAL h 9 OR 4 > H L _ *150 [3.81] r TYP. YELLOW

a-0402wa

Abstract: A0603 A0805
Contextual Info: Thin Film Surface Mount Chip Attenuators The ims A-Series thin film surface mount chip attenuator line is ideal for applications requiring precision attenuation in a small form factor packages. The attenuators are provided in the “π” configuration. Thin

DP83848W

Abstract: cb346 cb405 RB108 440K panasonic tv diagram T14 H05 SOT23 5 CB368 XB02 DS46
Contextual Info: Rev: 031008 DS33X162 Demo Kit Features General Description The DS33X162 demo kit DK is an easy-to-use evaluation board for the DS33X162 Ethernet-overPDH device. The demo kit contains an option for either T3/E3 or T1/E1 serial links. All serial links are

b0407

Abstract: B0405 b0806 D08030 B0803 d0403 B0805 b0404 f030 B04030
Contextual Info: 7P Retrieve Reels Reels for Retrieving: EXAMPLES: A moving car is to travel 55 feet. Required cable is 4 Conductor/No. 10. Extra cables needed to hook up to the car is 2 feet. The following EXAMPLES appear in bold type in the selection charts. 1. If the reel must be END MOUNTED, the required cable length

DM024

Abstract: oti 2168 CM17B transistor bf 175
Contextual Info: 5304804 LSI LOGIC □□mb7A LCA300K G ate Array 5 V olt Series P roducts D atabook Oct ober 1993 f 55b 5304604 0014b7T 4^2 * L L C Preface The LCA300K Gate Array Product Series Databook is written for logic and system designers who wish to use LSI Logic’s 0.6-micron gate

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

GRM1882C1H330JA01D

Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

RD07MUS2B

Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier

350-400MHZ

Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V