TL092
Abstract: AN-643 signal path designer
Text: National Semiconductor Application Note 643 Joe Cocovich December 1989 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be
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minor project proposal on electronics
Abstract: TL092 AN-643 signal path designer national special function analog and digital circuits
Text: National Semiconductor Application Note 643 Joe Cocovich April 2001 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be
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TRANSISTOR 8052
Abstract: 8052 basic E03644 AD8305 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643
Text: AN-643 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Closed-Loop Control Circuit Implementation of the ADuC832 MicroConverter IC and the AD8305 Logarithmic Converter in a Digital Variable Optical Attenuator
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AN-643
ADuC832
AD8305
16-lead
AD8305,
log10
E03644
TRANSISTOR 8052
8052 basic
E03644
Microconverter
Analog Voltage Variable Attenuator
Variable-Optical-Attenuator
400M
AD823
AN-643
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055E-3
Abstract: csd261 PNP transistor TO-92 BC
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CSA643Rev110302D
055E-3
csd261
PNP transistor TO-92 BC
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CSA643Rev110302D
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Untitled
Abstract: No abstract text available
Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available
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MP42141
MP42141
MP42141-509
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transistor bc 643
Abstract: No abstract text available
Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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QSC/L-000019
C-120
CSA643Rev110302D
transistor bc 643
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MP42141
Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available
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MP42141
MP42141
MP42141-509
RF TRANSISTOR NPN MICRO-X
low noise transistors microwave
GHZ micro-X Package
MP4214135
MP4214100
MP42141-509
S21E
S22E
MICRO-X
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monochrome monitor schematic
Abstract: CR3424R MSK643 MSK643B high voltage crt transistor 643
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease
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MIL-PRF-38534
175MHz
75Vpp
CR3424R
MSK643
MSK643B
Military-Mil-PRF-38534
monochrome monitor schematic
CR3424R
MSK643
MSK643B
high voltage crt
transistor 643
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Untitled
Abstract: No abstract text available
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease
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175MHz
75Vpp
CR3424R
MIL-PRF-38534
MSK643
MSK643B
Military-Mil-PRF-38534
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F508
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease
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MIL-PRF-38534
175MHz
70Vpp
CR3424R
MSK643
MSK643G
F508
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transistor 643
Abstract: CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2nS Transition Times Drives 8.5pF Capacitive Load With Ease
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MIL-PRF-38534
175MHz
75Vpp
CR3424R
MSK643
MSK643B
Military-Mil-PRF-38534
transistor 643
CR3424R
monochrome crt schematic
MSK643
MSK643B
high power fet amplifier schematic
A 643 transistor
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease
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MIL-PRF-38534
175MHz
70Vpp
CR3424R
MSK643
MSK643G
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C22B
Abstract: ESM692
Text: *ESM 642 *ESM 643 NPN SILICON TRANSISTORS, EP ITAXIAL PLANAR TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X Compì, of ESM 692, ESM 693 % Preferred device D is p o s itif recommandé High breakdow voltage Haute tension de claquage 300 V
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CB-97
C22B
ESM692
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Untitled
Abstract: No abstract text available
Text: 19- 1783; Rev 0; 6/97 High-Efficiency, Step-Up DC-DC Converters for 1V Inputs Features The MAXI 642/MAXI 643 are high-efficiency, low-voltage, step-up DC-DC converters intended for devices pow ered by a single alkaline cell. They feature low quies cent supply currents and are supplied in the ultra-small
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642/MAXI
7bb51
ib25M
MAX1642/MAX
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f640
Abstract: IR 643 643R
Text: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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F640/641/642/643
F640R/641R/642R
/643R
IRF640,
IRF641,
IRF642,
IRF640R,
IRF641R,
IRF642R
IRF643R
f640
IR 643
643R
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Untitled
Abstract: No abstract text available
Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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QDS4033
F640/641/642/643
F640R
/641R
/642R
/643R
T0-22QAB
IRF640,
IRF641,
IRF642,
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BD 649
Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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BO 649
Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington
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0235bQS
T-33-29
OP-66)
643/BD
645/BD
BD643.
0QQ43
T-33-29
BD647
BO 649
BD 104
darlington bd 645
TOP-66
b 647 c
BD 649
BD64S
Q62702-D376
BD 104 NPN
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BD 649
Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington
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fl23SLQS
T-33-29
OP-66)
643/BD
645/BD
BD647.
BD843,
BD645.
BD647,
BD 649
2SC 645
TOP-66
BD 104 NPN
darlington bd 645
BD 649/BD 650
BD647
BD 104
Q62702-D229
Q62901-B65
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BF298
Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
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BCW94
BF298
BC 458
transistors BC 458
transistors BC 548 BC 558
transistor BC 458
transistor bf 422 NPN
bc 457
transistors BC 548 BC 558 PNP
BC 557 npn
Transistor BC 457
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2n2222 -331 transistors
Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111
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BC107
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
BC109C
2n2222 -331 transistors
2N2222A 331
2n2222 -331
2n2222 a 331
2n2222 331 transistors
JA101P
2n2222 331
2n3904 331
BC876
bd131 bd132
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ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623
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OT-23
KSC1623
812/KSC
SA812/KSC
KSA812/KSC1623
KSC1674/KSC1675
KSC838/KSC1676
KSC945/KSC815
ksd 250v 10a
B0X34C
ksd 202
ksa 3.3
KSC1330
IR 733
sa992
uhf fm 1845 IF
508AF
KSA733
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BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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