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    A/PNP TRANSISTOR 120V 10A Search Results

    A/PNP TRANSISTOR 120V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3152-E Renesas Electronics Corporation Nch Single Power Mosfet 120V 10A 130Mohm To-220Fm Visit Renesas Electronics Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    A/PNP TRANSISTOR 120V 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PT10m

    Abstract: A1210 BTA1210J3
    Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


    Original     		C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210 PDF

    13T1

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC 4flE D • fc^TaSflO 00D 13T1 T ib Product BulletinOTC1550 August 1990 PNP Power Switching Transistor Die ■ OTK ^ 3 ? . ^ 'T -¥ 7 '\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver


    OCR Scan     		BulletinOTC1550 0TC1550 OTC1900 -500mA, 10MHz OTC1550 2N5003 2N5153, 2N6227 2N6308, 13T1 PDF

    Tenma

    Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
    Text: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals


    Original     		300mA 20K/volt Tenma pnp transistor 1000v philips AA Alkaline battery dimensions PDF

    200w AUDIO AMPLIFIER

    Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
    Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 25ime 300ms, 200w AUDIO AMPLIFIER transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a PDF

    2N5003

    Abstract: 2N5153 OTC1550 OTC155Q OTC1900
    Text: OPTEK T E CH NO LO GY INC Product Bulletin OTC1550 August 1990 4ÔE D • ^TâSÔD OOD13 T1 Tib Hi OTK U M fc K • PNP Power Switching Transistor Die 'T -v i-\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver


    OCR Scan     		ODD13T1 OTC1550 OTC1900 1550-80L 1550-80H 1550-120L -500mA, 10MHz OTC155Q 2N5003 2N5153 OTC1900 PDF

    120v 10a transistor

    Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A


    Original     		-120V 2SD1126 -10mA -120V, -100V, 120v 10a transistor DARLINGTON -5A 100v pnp 2SB955 2SD1126 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		BDX66 -100V -120V O-204AA) PDF

    TRANSISTOR BDX

    Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B PDF

    NPN Transistor 10A 24V

    Abstract: 120v in 24v 10A OUT power converter IDEC H-14 Q13-Q16 IEC60068-2-30 FL1B-CL1C12 IEC-61131 FL1B-M08B2R2 m08d
    Text: H www.idec.com/smartrelay Additional Web Resources • New and updated product information • Downloadable software demos & upgrades • Part configuration tool & cross reference • Online stock check & ordering • IDEC field sales & distributor search


    Original     		Windows95/98/ME/NT/2000/XP 266MHz 128MB 262-IDEC 317-IDEC NPN Transistor 10A 24V 120v in 24v 10A OUT power converter IDEC H-14 Q13-Q16 IEC60068-2-30 FL1B-CL1C12 IEC-61131 FL1B-M08B2R2 m08d PDF

    2N6127

    Abstract: Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129
    Text: ^/outran ra y <gT ©Ä¥ÄIL®( Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 63) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		4i45mm 203mm) 2N6127 Vceo 80V Ic 0.5A 2N5312 2N5318 2N5677 2N5742 2N5744 SDT3101 SDT3129 PDF

    MJ11015

    Abstract: No abstract text available
    Text: PNP SILICON DARLINGTON TRANSISTOR MJ11015 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		MJ11015 -120V MJ11015 PDF

    2N3597

    Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
    Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		305mm) 2N3597 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63 PDF

    2SC1079

    Abstract: 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.


    Original     		2SB679 -120V 2SC1079 -10mA 2SC1079 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier PDF

    sdt31

    Abstract: No abstract text available
    Text: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		203mm) 350pF 350pF 2N5312, 2N5318, 2N5677, 2N5744, 2N5742, 2N6127, SDT3101 sdt31 PDF

    2SB679

    Abstract: 2SC1079 transistor 2SC1079
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.


    Original     		2SB679 -120V 2SC1079 -10mA 2SB679 2SC1079 transistor 2SC1079 PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


    Original     		MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent PDF

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier PDF

    120v 10a transistor

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC fib D E | A3hAb02 D002£7b 0 ~f~ 'T'~ 3 } ~ ° * ELEMENT NUMBER 186 MEDIUM VOLTAGE, FAST SWITCHING NPN E P IT A X IA L/T R IP L E DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum FO RM ERLY 86


    OCR Scan     		A3hAb02 305mm) 700pF 700pF 2N3597, 2N3599, 2N5539, SDT8301 120v 10a transistor PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    ELEVATOR CONTROL PLC ladder logic

    Abstract: plc programming elevator FL1D-H12RCC ELEVATOR LOGIC function blocks PLC programming toshiba t1 FL9Y-B966-0 HW P IDEC impulse relay FL1B-Y1371-SW8 IEC60068-2-30
    Text: Courtesy of Steven Engineering, Inc.-230 Ryan Way, South San Francisco, CA 94080-6370-Main Office: 650 588-9200-Outside Local Area: (800) 258-9200-www.stevenengineering.com Think Automation and beyond. PS5R Slim Line Power Supplies SA1E Sensors IDEC PS5R Slim Line power supplies have


    Original     		94080-6370-Main 588-9200-Outside 258-9200-www UL508 UL1604 operatindows95/98/ME/NT/2000/XP 266MHz 128MB 262-IDEC 317-IDEC ELEVATOR CONTROL PLC ladder logic plc programming elevator FL1D-H12RCC ELEVATOR LOGIC function blocks PLC programming toshiba t1 FL9Y-B966-0 HW P IDEC impulse relay FL1B-Y1371-SW8 IEC60068-2-30 PDF

    74c74

    Abstract: No abstract text available
    Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		305mm) 74c74 PDF

    120v 10a transistor

    Abstract: 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor
    Text: ^atitran [?[M>[B y Tr © ä ? ä il Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		4i45mm 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884. 2N6437, 2N6438 120v 10a transistor 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 8368602 S OL I TRON DEVICES I NC TS 95D 02887 D D E | û 3 b û t , D 2 GODSfifl? S T ~ MT^iL© _ "_ Z - Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION


    OCR Scan     		203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884, 2N6437, 2N6438 PDF

    MJ11015

    Abstract: No abstract text available
    Text: 1165917 High-current complementary silicon transistors. For use output devices in complementary general purpose amplifier applications. Features: • • • TO-3 High DC current gain - hFE = 1000 (minimum) at IC - 20A dc. Monolithic construction with built-in base emitter shunt resistor.


    Original     		PDF