A/A/DIODE S212 Search Results

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

Si5853DC

Abstract: Si5853DC-T1
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

Contextual Info: S2122PA200FE preliminary datasheet flowPhase 2 S 1200V/200A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2122PA200FE Maximum Ratings Tj=25°C, unless otherwise specified

Contextual Info: S2122PA200SC preliminary datasheet flowPhase 2 S 1200V/200A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2122PA200SC Maximum Ratings Tj=25°C, unless otherwise specified

Contextual Info: S2124PA300SC preliminary datasheet flowPhase 2 S 1200V/300A Features flowScrew 2 housing ● 1/2 bridge ● Low inductive ● Screw package ● NTC Target Applications ● Motor drive ● UPS ● Solar Schematic Types ● S2124PA300SC Maximum Ratings Tj=25°C, unless otherwise specified

Contextual Info: S112S01 Series S212S01 Series S112S01 Series S212S01 Series IT rms ≤12A, Non-Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S112S01 Series and S212S01 Series Solid State Relays (SSR) are an integration of an infrared emitting

600v plating phase rectifier diagram

Abstract: shin-etsu g747 origin 4pin phototriac S212S01 LR63705 S112S01 Dow Corning 747 12A125VAC
Contextual Info: S112S01 Series S212S01 Series S112S01 Series S212S01 Series IT rms ≤12A, Non-Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S112S01 Series and S212S01 Series Solid State Relays (SSR) are an integration of an infrared emitting

RM10TB-H

Abstract: 1S1288R T20A6 Sanken STR BYX13 varo diode tm59 Diode Westcode BYX25-800 22DC11
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A V VF IR "F RRM IFSM Max (V) (A) (V) @ Test (A) 25 °C @ (A) VR IR Test (V) (A) @ T2 Test (°C) T Op«r Max (°C) Package Style General-Purpose, lo >= 10 A (Cont'd) . . . .5 .

SM05C

Abstract: bidirectional zener diodes zener diode c1 zener diode cross reference Zener diode DW diode ZENER C2 S211 S212 Pi filter array design Zener Diodes introduce
Contextual Info: AND8200/D Design Considerations for ESD/EMI Filters: I Almost Everything You Wanted to Know About EMI Filters and Were Afraid to Ask http://onsemi.com Prepared by: Ryan Hurley Applications Engineer ON Semiconductor APPLICATION NOTE Background With data transfer rates and clock frequencies ever

Si5902DC

Abstract: Si5902DC-T1 marking code ca
Contextual Info: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code

Si5406DC-T1

Abstract: Si5406DC
Contextual Info: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 rDS(on) (Ω) ID (A) 0.020 @ VGS = 4.5 V 9.5 0.025 @ VGS = 2.5 V 8.5 D TrenchFETr Power MOSFETS: 2.5-V Rated D Low Thermal Resistance APPLICATIONS D Load/Power Switching for Cell Phones and

Si5905DC

Abstract: Si5905DC-T1 MARKING CODE DB
Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

ChipFET

Abstract: Si5933DC Si5933DC-T1
Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

Si5513DC

Abstract: Si5513DC-T1
Contextual Info: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel -20 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = -4.5 V -2.9 0.260 @ VGS = -2.5 V -2.2

Si5404DC

Abstract: Si5404DC-T1
Contextual Info: Si5404DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code

ChipFET

Abstract: Si5904DC Si5904DC-T1
Contextual Info: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code

Si5402DC

Abstract: Si5402DC-T1
Contextual Info: Si5402DC Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 D 1206-8 ChipFETt 1 D D D D D D G G S Marking Code AA XX Lot Traceability and Date Code S Part # Code Bottom View

Si5915DC

Abstract: Si5915DC-T1
Contextual Info: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7

Si5975DC

Abstract: Si5975DC-T1
Contextual Info: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

Si5504DC

Abstract: Si5504DC-T1
Contextual Info: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1

MARKING CODE EA

Contextual Info: Si5504DC Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1

ftc s212

Abstract: TO-92SP-4 4 pin 2-phase hall effect driver FS212-B ftcs212 B 500 diode S6458 2 PHASE DC MOTOR DRIVE IC 2-PHASE DC MOTOR DRIVE IC
Contextual Info: FS212 Technology 2 PHASE DC MOTOR DRIVE IC GENERAL DESCRIPTION The FS212, a 1-chip composed of hall sensor and output coil drivers, applied to 2-phase DC motor. The high sensitivity of Hall effect sensor is suitable for motors from mini-type CPU coolers to blowers and DC fans. Typical operation current is 0.4A and operating voltage

Si5903DC

Abstract: Si5903DC-T1
Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

Si5406DC

Abstract: Si5406DC-T1
Contextual Info: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 rDS(on) (Ω) ID (A) 0.020 @ VGS = 4.5 V 9.5 0.025 @ VGS = 2.5 V 8.5 D TrenchFETr Power MOSFETS: 2.5-V Rated D Low Thermal Resistance APPLICATIONS D Load/Power Switching for Cell Phones and