ZXMN3A14FTA Search Results

Contextual Info: Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance Fast switching speed

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

ZXMN3A14F

Abstract: ZXMN3A14FTA ZXMN3A14FTC sm18a 32ag
Contextual Info: ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.065 ; ID=3.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: A Product Line of Diodes Incorporated ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

AEC-Q101

Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
Contextual Info: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC

marking 314

Abstract: DS335
Contextual Info: A Product Line of Diodes Incorporated ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)

ZXMN3A14F

Abstract: ZXMN3A14FTA ZXMN3A14FTC
Contextual Info: ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.065 ; ID=3.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

CRCW201010R0FKEFHP

Abstract: bq33100 Battery connected Box ev2300 HPA681 WSL2010R0200 4P SOT323 2SD1758TLR TL431CPK BSS223PW
Contextual Info: User's Guide SLUU466 – March 2011 bq33100 Super Capacitor Pack Manager EVM NOTE: BEFORE YOU START: Download the latest revision of the device firmware and the evaluation software from the TI bq33100 product page at www.ti.com. Go to the Tools and Software section. For step-by-step instructions on reprogramming the device firmware, refer