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    Y5117 Search Results

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    Y5117 Price and Stock

    Bel Power Solutions Y5117P

    DC DC CONVERTER 0.7-3.63V 62W
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    Infineon Technologies AG CY5117-1X07I

    INFINEON
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    ebm-papst R2E160-AY51-17

    AC BACKWARD-CURVED MOTORIZED IMP
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    DigiKey R2E160-AY51-17 Bulk 10
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    Avnet Americas R2E160-AY51-17 Bulk 19 Weeks 10
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    Mouser Electronics R2E160-AY51-17
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    Newark R2E160-AY51-17 Bulk 10
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    Master Electronics R2E160-AY51-17
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    Sager R2E160-AY51-17 1
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    SMC Corporation of America SS5Y51-17-DUB00074

    17 STA MANIFOLD W/ D-SUB, SY-1 SERIES | SMC Corporation SS5Y51-17-DUB00074
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    SMC Corporation of America SS5Y51-17-DUZ01408

    17 STA MFLD ASSY, SY-1 SERIES | SMC Corporation SS5Y51-17-DUZ01408
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    RS SS5Y51-17-DUZ01408 Bulk 5 Weeks 1
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    Find more Y5117 price and stock on Findchips.com

    Y5117 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Y5117P Power-One Original PDF
    Y5117P Power-One DC DC Converters, Power Supplies - Board Mount, DC/DC CONVERT 0.7-3.63V 17A Original PDF
    Y5117PC Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF
    Y5117PC-T1 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117PC-T2 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117PG Power-One Original PDF
    Y5117P-T2 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117P-T3 Power-One IC CONV DC-DC SNGL OUT STEP DOWN 3 TO 13.2VIN 25SIP T/R Original PDF
    Y5117XX-T1 Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF
    Y5117XX-T2 Power-One 3.0V to 13.2V Input 0.7V to 3.63V Output Original PDF

    Y5117 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HY5117404a

    Abstract: KRAH
    Text: “H Y U N D A I ^Y5117404A, HY5116404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		Y5117404A, HY5116404A HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404ASLT HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5117404a KRAH PDF

    PRESET 10Kohm

    Abstract: JESD-B103B Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits  One part for different input and output voltage ranges  One part with up to 17A output  Reduces number of different parts in inventory  Compatible with conventional pick-and-place


    Original     		Y5117 UL60950 10kOhm Y5117P MCD10186 18-Jun-10 PRESET 10Kohm JESD-B103B Y5117PC PDF

    SR-332

    Abstract: Y5117P Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		Y5117 Y5117P 10kOhm SR-332 Y5117P Y5117PC PDF

    Untitled

    Abstract: No abstract text available
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		Y5117 UL60950 10kOhm Y5117P PDF

    PTC- 8100

    Abstract: No abstract text available
    Text: Y5117P 17A DC-DC POL Preliminary Data 3.0V to 13.2V Input • 0.7V to 3.6V Output Y5117P Member of the Family Industry First Vertical Surface Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts


    Original     		Y5117P Y5117P 220uF ZGN27701L XMR037 XMR030 WWL201 Y-CTD227M10 Y-CNN475M25 WRM164 PTC- 8100 PDF

    HY5117404A

    Abstract: HY5117404Aj
    Text: HYUNDAI Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117404A Y5117404A q0083 27BSC 1AD38-10-MAY95 5117404AJ HY5117404ASLJ HY5117404Aj PDF

    jc 216 sc

    Abstract: 1MX1
    Text: Y5117100 Series •HYUNDAI 16Mx 1-bit C M O S DRAM DESCRIPTION The H Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5117100 Y5117100 1AD04-20-MAR94 HY5117100JC Y5117100U HY5117100TC HY5117100LTC jc 216 sc 1MX1 PDF

    B103

    Abstract: Y5117P 4.7uF 25V X7R C05C0
    Text: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Industry’s First Vertical Surface -Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts


    Original     		Y5117P 220uF Y5117P B103 4.7uF 25V X7R C05C0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Y5117P 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible


    Original     		Y5117P 13aluation 10kOhm Y5117P PDF

    Untitled

    Abstract: No abstract text available
    Text: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Preliminary Member of the Family Industry’s First Vertical Surface-Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output


    Original     		Y5117P 220uF Y5117P PDF

    HYM536410CM

    Abstract: No abstract text available
    Text: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    OCR Scan     		HYM536410C 4Mx36 4Mx36-bit Y5117400C HY514100A HYM536410CM HYM536410CMG 72-Pin PDF

    HY5117404

    Abstract: HYM532414A
    Text: «HYUNDAI HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 532414A is a 4M x 32-bit EDO mode C M O S DRAM module consisting of eight H Y5117404A in 24/26 pin SOJ or TSO PII on a 72 pin glass-epoxy printed circuit board. 0.1* -and 0.01* «decoupling are


    OCR Scan     		HYM532414A 4Mx32-bit 32414A 32-bit Y5117404A 532414AM/ASLM/ATM/ASLTM 532414AM 96C94 72pin HY5117404 PDF

    JESD-B103-B

    Abstract: 3 pin preset resistor 10k SR-332 Y5117P Y5117PC
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		Y5117 Y5117P 10kOhm JESD-B103-B 3 pin preset resistor 10k SR-332 Y5117P Y5117PC PDF

    Untitled

    Abstract: No abstract text available
    Text: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place


    Original     		Y5117 Y5117P 10kOhm PDF

    Untitled

    Abstract: No abstract text available
    Text: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5117100 1AD04-10-APR93 HY5117100JC HY5117100UC HY5117100TC HY5117100LTC HY5117100RC PDF

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		256Kx4-bit, 1MX16BIT 16MX1 PDF

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: Y5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The Y5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS PDF

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y M 5 6 4 4 1 4 A N - S e r i e s 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen Y5117404A in 24/28 pin SOJ o r TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		64-bit HYM564414A HY5117404A 16-bit HYM564414ANG/ATNG/ASLNG/ASLTNG 198-OmW DQ0-DQ63) 1EE15-10-JAN95 PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    Untitled

    Abstract: No abstract text available
    Text: • ‘H Y U N D A I * Y5117800C,HY5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this


    OCR Scan     		HY5117800C HY5116800C PDF

    rsst5

    Abstract: No abstract text available
    Text: “HYUNDAI Y5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The Y5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117404B Y5117404B 1AD45-00-MAY95 HY5117404BJ HY5117404BLJ HY5117404BAT HY5117404BSLT rsst5 PDF

    HY5117404A

    Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
    Text: “H Y U N D A I Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide


    OCR Scan     		HY5117404A 1AD38-10-MAY95 0D45DG HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117 PDF