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    WS57LV291C Search Results

    WS57LV291C Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    WS57LV291C STMicroelectronics WS57LV291C PROM-RPROM PRELIMINARY DATASHEET Original PDF
    WS57LV291C-70 STMicroelectronics HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM Original PDF
    WS57LV291C-70T STMicroelectronics High Speed 3.3 V 2k x 8 CMOS PROM/RPROM Original PDF
    WS57LV291C-70T Waferscale Integration High Speed 3.3 Volt 2K x 8 CMOS PROM / RPROM Scan PDF
    WS57LV291C-90 STMicroelectronics HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM Original PDF
    WS57LV291C-90T STMicroelectronics High Speed 3.3 V 2k x 8 CMOS PROM/RPROM Original PDF
    WS57LV291C-90T Waferscale Integration High Speed 3.3 Volt 2K x 8 CMOS PROM / RPROM Scan PDF

    WS57LV291C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WS57LV291C

    Abstract: WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T of 1000 microfarad capacitor
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt VCC • Fast Access Time • Available in 300 Mil "Skinny" DIP • Immune to Latch-up — t ACC = 70 ns — t CS = 20 ns — Up to 200 mA • ESD Protection Exceeds 2000V


    Original
    PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T of 1000 microfarad capacitor

    16k prom

    Abstract: 16k x 8 PROM ws57c43 datasheet for 4K x -12sl WS57C191C WS57C291C WS57C43C WS57C45
    Text: PROM/RPROM SELECTION GUIDE ARCHITECTURE 32K x 8 WS57C71C 16K x 8 WS57C51C 8K x 8 WS57C49C 4K x 8 WS57C43C 2K x 8 REGISTERED WS57C45 2K x 8 WS57C191C 2K x 8 WS57C291C 2K x 8 (3 VOLT) WS57LV291C 25 30 35 40 45 50 55 60 65 70 90 ACCESS TIME (ns) Return to Main Menu


    Original
    PDF WS57C71C WS57C51C WS57C49C WS57C43C WS57C45 WS57C191C WS57C291C WS57LV291C 16k prom 16k x 8 PROM ws57c43 datasheet for 4K x -12sl WS57C191C WS57C291C WS57C43C WS57C45

    WS57LV291C

    Abstract: WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt VCC • Fast Access Time • Available in 300 Mil "Skinny" DIP • Immune to Latch-up — t ACC = 70 ns — t CS = 20 ns — Up to 200 mA • ESD Protection Exceeds 2000V


    Original
    PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T

    CERDIP 28 PINS

    Abstract: t-12824 cerdip WS57C291C WS57C43C WS57C45 WS57C49C WS57C51C WS57C71C WS57LV291C
    Text: FAMILY OF HIGH PERFORMANCE CMOS PROMs AND RPROMs PART NUMBER PAGE NO. DENSITY BITS ARCHITECTURE SPEED (ns) DRAWING NO. NO. OF PINS PACKAGE WS57C191C 2-7 16K 2K x 8 25 – 55 D1 J3 P2 24 28 24 CERDIP, 0.6" PLDCC Plastic DIP, 0.6" WS57C291C 2-7 16K 2K x 8


    Original
    PDF WS57C191C WS57C291C WS57LV291C WS57C45 WS57C43C WS57C51C WS57C71C CERDIP 28 PINS t-12824 cerdip WS57C291C WS57C43C WS57C45 WS57C49C WS57C51C WS57C71C WS57LV291C

    WSI eprom Programming algorithm

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — tA c c = 70 ns — Up to 200 mA ~ lcs = 20 ns • Low Power Consumption


    OCR Scan
    PDF WS57LV291C WS57LV291C WS57C291C S57LV291C WS57LV291C-70T WS57LV291C-90T WSI eprom Programming algorithm

    WSI algorithm D

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Fast Access Time — l ACC = 70 ns — t c s = 20 ns • Available in 300 Mil "Skinny" DIP • Immune to Latch-up — • Up to 200 m A ESD protection Exceeds 2000V


    OCR Scan
    PDF WS57LV291C WS57LV291C WSI algorithm D

    WSI Programming algorithm

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available In 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns • ESD Protection Exceeds 2000V


    OCR Scan
    PDF WS57LV291C WS57LV291C WS57C291C WS57LV291C-70T WS57LV291C-90T WSI Programming algorithm

    22A53

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — tACC = 70 ns — Up to 200 mA — t Cs = 20 ns • Low Power Consumption


    OCR Scan
    PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T S57LV291C 22A53

    WS57C291C

    Abstract: WS57LV291C WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T WSI Programming algorithm
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Fast Access Time — • Available in 300 Mil "Skinny" DIP • Immune to Latch-up t ACC = 70 ns — lcs = 20 ns • Low Power Consumption — —


    OCR Scan
    PDF WS57LV291C WS57LV291C WS57C291C WS57LV291C-70T WS57LV291C-90T WS57LV291C-70 WS57LV291C-90 WSI Programming algorithm

    Untitled

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns . EgD Protection Exceeds 2000V


    OCR Scan
    PDF WS57LV291C WS57LV291C S57LV291C WS57LV291C-70T WS57LV291C-90T

    Untitled

    Abstract: No abstract text available
    Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — I a c c = 70 ns — Up to 200 mA — 'cs = 20 ns • Low Power Consumption


    OCR Scan
    PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T

    Untitled

    Abstract: No abstract text available
    Text: FAMILY OF HIGH PERFORMANCE CMOS PROMs AND RPROMs PART NUMBER PAGE NO. DENSITY BITS ARCHITECTURE SPEED (ns) DRAWING NO. NO. OF PINS PACKAGE WS57C191C 2-7 16K 2K X 8 2 5 -5 5 D1 J3 P2 24 28 24 CERDIP, 0.6" PLDCC Plastic DIP, 0.6" WS57C291C 2-7 16K 2K X 8 2 5 -5 5


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    PDF WS57C191C WS57C291C WS57LV291C WS57C45 WS57C43C WS57C49C WS57C51C WS57C71C

    Untitled

    Abstract: No abstract text available
    Text: FAMILY OF HIGH PERFORMANCE CMOS PROMs AND RPROMs PART NUMBER PAGE NO. DENSITY BITS SPEED (ns) DRAWING NO. NO. OF PINS PACKAGE WS57C191C 2-7 16K 2K X8 2 5 -5 5 D1 J3 P2 24 28 24 CERDIP, 0.6“ PLDCC Plastic DIP, 0.6" WS57C291C 2-7 16K 2K X 8 2 5 -5 5 S1 T1


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    PDF WS57C191C WS57C291C WS57LV291C WS57C45 WS57C43C WS57C49C WS57C51C WS57C71C