VNDQ06 Search Results

transistor VN46AFD

Abstract: VN46AFD TO220SD
Contextual Info: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL

Contextual Info: Hmzzàz TN0601L N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA 'V V (BR)DSS 60 1.8 BOTTOM VIEW •d (A) 0.47 1 SOURCE 2 GATE Performance Curves: VNDQ06 3 DRAIN 3 il— L-n • - É ? i ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: H tSffA VN66AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR|DSS o *D rX ’ (A 3 1.46 60 FRONT VIEW TO-220SD 1 SOURCE 2 GATE 3 & T A B -D R A IN Performance Curves: VNDQ06 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

transistor VN46AFD

Abstract: VN46AFD
Contextual Info: VN46AFD c r S ilic c x ìix JUm in c o rp o ra te d N-Channel E nhancem ent-M ode MOS Transistor TO-220SD TOP VIEW o PRODUCT SUMMARY V BR DSS (V) ••DS(ON) (n ) (A) PACKAGE 40 3 1.46 TO-22QSD 1 2 3 1 SOURCE 2 GATE 3 & TAB - DRAIN Performance Curves: VNDQ06 (See Section 7)

tq1004j

Contextual Info: TQ1004J N-Channel Enhancement-Mode MOS Transistor Arrays_ V BRJDSS T 2 60 TOP VIEW 14-PIN PLASTIC PRODUCT SUMMARY Dual-ln-Llne Package <lß •d (A 0.45 Performance Curves: VNDQ06 i— i - D ,[T h | D4 S i (T 13] s 4 12] g 4 Q ,[T ÏÏ] N/C

Contextual Info: jre g s b 2N6660 N-Channel Enhancement-Mode MOS Transistor TO-39 TO-2Q5AD B O T T O M VIEW PRODUCT SUMMARY V (BR)DSS •d rDS(ON) (Û) (A) 3 1.1 60 2 GATE 3 & C A S E-D R A IN Performance Curves: VNDQ06 J ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

VN46AFD

Abstract: 6178 vn0606m
Contextual Info: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line

2N6659

Contextual Info: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

VN46AFD

Abstract: transistor VN46AFD VN46AF
Contextual Info: SILICONIX INC SflE D • 8254733 00172S4 TTT H S I X VN46AFD N-Channel Enhancement-Mode MOS Transistor CT'Siliconix in c=oorrppoa rra a te d PRODUCT SUMMARY V BRJDSS Id (A 40 3 TO-220SD FRONT VIEW o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & T A B -D R A IN

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

vn0606m

Abstract: b0808
Contextual Info: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V

gs 1117 ax

Abstract: VN66 TN0610L VN0606M
Contextual Info: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33

2N6660 JANTX

Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

52426

Contextual Info: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M

JANTX2N6660

Abstract: JANTXV2N6660
Contextual Info: 2N6660JAN/JANTX/JANTXV_ VISHAY Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUM MARY V (BR)DSS M i n ( V ) r DS(on) M a x ( Q ) v G S(th) ( V ) I d (A ) 60 3 e v G S= 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIO NS

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

vn66afd

Abstract: 0606L TN0601L VN0606L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

VN46AFD

Abstract: VNDQ1 vnd02 TD1001 VN46AF
Contextual Info: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)

4170A

Contextual Info: 'SSSSS TD1004Y Dual N-Channel Enhancement-Mode MOSFETs SO-8 PACKAGE PRODUCT SUMMARY V BRJDSS siq : Gicr S2Q: csanz •d (A 60 2 0.65 FEATURES APPLICATIONS • Electrically Isolated MOSFETs • MOSFET Drivers 1 8 2 7 3 6 XI 01 ~n D1 HU D2 4 5 ~ n D2 Top View

VN66AFD

Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46