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    V16800 Search Results

    V16800 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SN74CBTLV16800DLR Texas Instruments Low-Voltage 20-Bit FET Bus Switch With Precharged Outputs 48-SSOP -40 to 85 Visit Texas Instruments Buy
    SN74CBTLV16800VR Texas Instruments Low-Voltage 20-Bit FET Bus Switch With Precharged Outputs 48-TVSOP -40 to 85 Visit Texas Instruments Buy
    SN74CBTLV16800GR Texas Instruments Low-Voltage 20-Bit FET Bus Switch With Precharged Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
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    V16800 Price and Stock

    Rochester Electronics LLC SN74CBTLV16800GR

    IC BUS SWITCH 10 X 1:1 48TSSOP
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    DigiKey SN74CBTLV16800GR Bulk 20,247 433
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    Rochester Electronics LLC SN74CBTLV16800DL

    IC BUS SWITCH 10 X 1:1 48SSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SN74CBTLV16800DL Tube 10,075 214
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    Rochester Electronics LLC SN74CBTLV16800VR

    IC BUS SWITCH 10 X 1:1 48TVSOP
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    DigiKey SN74CBTLV16800VR Bulk 6,000 433
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    Rochester Electronics LLC SN74CBTLV16800DLR

    IC BUS SWITCH 10 X 1:1 48SSOP
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    DigiKey SN74CBTLV16800DLR Bulk 5,000 433
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    Rochester Electronics LLC 74CBTLV16800ZPV

    74CBTLV16800 - LOW-VOLTAGE 20 BI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 74CBTLV16800ZPV Bulk 1,567 417
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    V16800 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V17800B,HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode C M O S D RAM s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    HY51V17800B V16800B PDF

    B754

    Abstract: S4240
    Text: O K I Semiconductor MSM51 V16800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the V16800 is OKI's CMOS silicon gate process technology.


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    MSM51V16800_ 152-Word MSM51V16800 cycles/64ms MSM51V16800 A0-A11 b724240 B754 S4240 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51 V17800B.HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is


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    HY51V17800B V16800B A0-A11) PDF

    MSM51V16800A

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16800 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16800A is


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    MSM51V16800A_ 152-Word MSM51V16800A 28-pin cycles/64 PDF

    Untitled

    Abstract: No abstract text available
    Text: • HY51V17800C,HY51 V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    HY51V17800C V16800C A0-A11) PDF

    Untitled

    Abstract: No abstract text available
    Text: •'HYUNDAI HY51V17800C, V16800C 2M x 8-bit CMOS DRAM P R E LIM IN A R Y DESCRIPTION ORDERING INFORMATION This fam ily is a 16M bit dynam ic R A M organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P ag e m ode C M O S D R A M s. Fast P ag e m ode offers high speed


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    HY51V17800C, HY51V16800C HY51V17800C 17800C Y51V17800C HY51V17800CSLT 51V16800C HY51V16800CT HY51V16800CSLT PDF

    Untitled

    Abstract: No abstract text available
    Text: P R ELIM IN A R Y - - April 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 V 1 6 8 0 0 A -6 0 /-7 0 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M V16800A is a fully decoded CM OS Dynamic RAM DRAM that contains


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    B81V16800A 512-bits B81V16800A-XXPFTN PDF

    Untitled

    Abstract: No abstract text available
    Text: •'H Y U N D A I HY51V17800B, V16800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the sam e row.


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    HY51V17800B, HY51V16800B HY51V17800BJ HY51V17800BSLJ HY51V17800BT HY51V17800BSLT HY51V16800BJ HY51V16800BSLJ HY51V16800BT HY51V16800BSLT PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU S E MI CONDUCT OR D ATA S H E E T D S 0 5 -1 0170-2E MEMORY CMOS 2M x 8 BIT FAST PAGE MODE DYNAMI C RAM M B 8 1 V 16800 A -60/-70 CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM • DESCRIPTION T h e F u jit s u M B 8 1 V 1 6 8 0 0 A is a fu lly d e c o d e d C M O S D y n a m i c R A M D R A M t h a t c o n t a i n s 1 6 , 7 7 7 ,2 1 6 m e t m s r y c e l l s a c c e s s i b l e in 8 - bit i n c r e m e n t s .


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    0170-2E PDF