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    UPB587P Search Results

    UPB587P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPB587P NEC 1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS Scan PDF

    UPB587P Datasheets Context Search

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    Prescalers

    Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
    Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an


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    PDF AN1014 UPB585B 24-Hour Prescalers UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014

    Prescalers

    Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
    Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an


    Original
    PDF AN1014 UPB585B Prescalers UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584

    Untitled

    Abstract: No abstract text available
    Text: NEC UPB587B UPB587G UPB587P 1.0 GHz DIVIDE-BY-2/4/8 PRESCALER OUTLINE DIMENSIONS FEATURES • HIGH F R E Q U E N C Y O P E R A T IO N : 1 GHz Units in mm OUTLINE BF08 • LO W S U P P L Y V O L T A G E : 2.2 V to 3.5 V 7.0±0.5 • • LO W S U P P L Y C U R R E N T : 5.5 mA


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    PDF UPB587B UPB587G UPB587P UPB587 UPB587B) UPG587G) UPB587B, UPB587G,

    Untitled

    Abstract: No abstract text available
    Text: UPB587B UPB587G UPB587P 1.0 GHz DIVIDE- BY- 2 /4 /8 PRESCALER TEST CIRCUIT FEATURES_ • HIGH FREQUENCY OPERATION TO 1 GHz • LOW SUPPLY VOLTAGE: 2.2 V to 3.5 V • LOW SUPPLY CURRENT: 5.5 mA • AVAILABLE IN TAPE AND REEL 308 PACKAGE


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    PDF UPB587B UPB587G UPB587P UPB587 UPB587P UPB587B) PB587G) UPB587G-E1 2500/Reel

    Untitled

    Abstract: No abstract text available
    Text: NEC UPB587B UPB587G UPB587P 1.0 GHz DIVIDE-BY-2/4/8 PRESCALER OUTLINE DIMENSIONS FEATURES • HIGH FREQUENCY OPERATION: 1 GHz Units in mm OUTLINE BF08 • LOW SUPPLY VOLTAGE: 2.2 V to 3.5 V 7 .0 + 0 .5 • • LOW SUPPLY CURRENT: 5.5 mA 1.27 + 0.1 • SMALL PACKAGE


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    PDF UPB587B UPB587G UPB587P UPB587 UPB587B) UPG587G) UPG587P) 12/9C

    Untitled

    Abstract: No abstract text available
    Text: ? ?£• 1 1 1991 UPB587B UPB587G UPB587P 1.0 GHz DIVIDE-BY-2/4/8 PRESCALER OUTLINE DIMENSIONS FEATURES • HIGH FREQUENCY OPERATION: 1 G Hz Units in mm OUTLINE BF08 • LOW SUPPLY VOLTAGE: 2.2 V to 3.5 V • LOW SUPPLY CURRENT: 5.5 m A • SMALL PACKAGE


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    PDF UPB587B UPB587G UPB587P UPB587B) UPG587G) UPG587P)

    UPB587G

    Abstract: BF08 UPB587 UPB587B UPB587P
    Text: NEC UPB587B UPB587G UPB587P 1.0 GHz DIVIDE-BY-2/4/8 PRESCALER FEATURES OUTLINE DIM ENSIONS • H IG H FREQ UENC Y OPERATION: 1 GHz Units in mm OUTLINE BF08 • LOW SUPPLY VOLTAGE: 2.2 V to 3.5 V • LOW SU PPLY CURRENT: 5.5 mA 1.7 MAX • SMALL PACKAGE DESCRIPTION AND APPLICATIONS


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    PDF UPB587B UPB587G UPB587P UPB587 UPB587B) UPG587G) UPG587P) UPB587B, UPB587G, BF08 UPB587P

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    mmic a08

    Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18


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