TP243 Search Results

TP2435

Contextual Info: TP2435 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP2435 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

TP242

Abstract: TP236 TP238 TP239 TP240 TP243
Contextual Info: Steel Switch Boxes 31/2" DEEP SWITCH BOXES – GANGABLE – 18.0 CUBIC INCH CAPACITY 2" WIDE x 3" LONG FOR NONMETALLIC CABLE – CLAMPS IN EACH END Steel Boxes TP236 TP238 TP239 TP242 TP243 Cat. # Bracket Ground Pigtail Ears TP236 TP238 TP239 TP240 TP242

TP2435

Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2435

Abstract: TP2435N8 TP2435NW
Contextual Info: TP2435 TP2435 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die* -350V 15Ω -2.4V -800mA TP2435N8 TP2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP2435

Contextual Info: Supertex inc. TP2435 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP2435 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TP2435

Abstract: TP2435N8 TP2435NW
Contextual Info: TP2435 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die* -350V 15Ω -2.4V -800mA TP2435N8 TP2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: Supertex inc. TP2435 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Free from secondary breakdown ►► Low input and output leakage

TP2435N8

Contextual Info: TP2435 TP2435 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die* -350V 15Ω -2.4V -800mA TP2435N8 TP2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

sot-89 na

Abstract: Marking N8 diode sot-89 marking code marking oc diode sot89
Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

88SE6121

Abstract: wpc8763ldg G5281RC1U-GP 88se6 AN-22 1D05V Wistron Corporation SC10U10V5KX-2GP H2434 wistron
Contextual Info: PCB STACKUP Project code: 91.4U601.001 PCB P/N : 07204-SC Revision : MAKI Block Diagram L1: L2: L3: L4: L5: L6: L7: L8: Mobile CPU CLK GEN. Merom 479 2G/2.33G ICS 9LPRS365 3 2.0G : 71.MEROM.A0U 2.33G : 71.MEROM.B0U 71.09502.00W HOST BUS G792 42 DOCK CRT & TV-OUT

SM 630 finger print module

Abstract: ADP3208J RTS5158E SE330U2VDM-L-GP USB232 WPCE776 BQ24740 CT3528 ADP3208 EMC2102-DZK-GP
Contextual Info: A B C D SYSTEM DC/DC LZ2 Block Diagram 4 E Project code: PCB P/N Revision : : INPUTS Penryn SV 35W 3 5V_S5 3D3V_S5 EMC2102 DDR2 socket PCB 8-LAYER STACKUP INPUTS 15 DCBATOUT 1D8V_S3 667/800/1066MHz@1.05V GND R.G.B DDR2 socket 3 TPS51100 APL5912 1D8V_S3 APL5912

MOSFET 2301

Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093
Contextual Info: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

winbond wpce773la0dg

Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
Contextual Info: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7

smd code wKX

Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
Contextual Info: [ Z zhtz|unGwyvwypl{hy€ Y X {opzGkvj|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hy€Gpumvyth{pvuG{oh{Gpz zhtz|unGlslj{yvupjzGjvNzGwyvwly{€U kvGuv{GkpzjsvzlG{vGvyGk|wspjh{lGmvyGv{olyz ljlw{GhzGh|{ovyplkGi€Gzhtz|unU k k jpjospk j i jw|GGGGGGaG ihuphzVkv{ohu j—GzŒ›GaG tjoTtGvkltR

K0321

Abstract: 9lprs WPCE773LA0DG finger probe USB48MHZ g822 1D05V foxconn TPS2231 RT9025-25PSP-GP
Contextual Info: 5 Crystal 14.318MHz 4 2 DDR3 37 15 667/800/1066MHz@1.05V CRT SWITCH PI5C3257QE AGTL+ CPU I/F INTEGRATED GRAHPICS PCIex16 LVDS, CRT I/F 46 ICH9M OZ711MZ030,31 SPI BIOS 4MB 6 PCIe ports 42 PCI/PCI BRIDGE 38 MIC In ACPI 2.0 12 USB 2.0/1.1 ports High Definition Audio

WPC8763

Abstract: RTM875 winbond wpc8763 RTM875-606-LF-GP Sil3531 SC10U25V6KX-1GP hy5rs123235b SCD1U16V2KX-3GP alc662 wistron
Contextual Info: 5 4 ME3 Block Diagram 3 2 Intel CPU D G792 4,5,6 REALTEK RTM875 22 3 5V_S3 DCBATOUT INPUTS 7,8,9,10,11,12 13,14 1D05V_S0 1D8V_S3 nVIDIA DDR I/F LVDS, CRT I/F OUTPUTS 15 DCBATOUT INTEGRATED GRAHPICS DDRII 667 Channel B D MAX8743 Crestline-GM/GML AGTL+ CPU I/F

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

KB3310

Abstract: RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter
Contextual Info: 5 4 3 2 Eiger Block Diagram 3D3V_S5 23 SYSTEM DC/DC TOP 667/800MHz 667/800/1067MHz@1.05V 15 AGTL+ CPU I/F HDMI DDR Memory I/F DDR2 DIMM2 18 INTEGRATED GRAHPICS 667/800MHz LVDS, CRT I/F PCIex16 13 6,7,8,9,10,11 X4 DMI 400MHz INT.MIC 35 Line In MXM CONN 30 C-Link0