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TOKO Inc PTL1608-F2N2C FIXED IND 2.2NH 650MA 220MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL1608-F2N2C	Cut Tape	6,154		1	1 $0.13 10 $0.131 100 $0.13 1000 $0.12498 10000 $0.12498	Buy Now
	PTL1608-F2N2C	Reel	6,000		6,000	1 - 10 - 100 - 1000 - 10000 $0.11698	Buy Now
NexGen Digital	PTL1608-F2N2C		8,486			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components MCTL160N15Y-TP N-CHANNEL MOSFET, TOLL-8L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCTL160N15Y-TP	Digi-Reel	3,975		1	1 $6.02 10 $4.035 100 $6.02 1000 $2.35 10000 $2.35	Buy Now
	MCTL160N15Y-TP	Cut Tape	3,975		1	1 $6.02 10 $4.035 100 $6.02 1000 $2.35 10000 $2.35	Buy Now
	MCTL160N15Y-TP	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.35	Buy Now
Mouser Electronics	MCTL160N15Y-TP		1,975			1 $5.47 10 $4.04 100 $2.91 1000 $2.35 10000 $2.35	Buy Now
New Advantage Corporation	MCTL160N15Y-TP		4,000		1	1 - 10 - 100 - 1000 - 10000 $3.13	Buy Now
TOKO Inc PTL1608-F1N5C FIXED IND 1.5NH 800MA 150 MOHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL1608-F1N5C	Cut Tape	3,248		1	1 $0.14 10 $0.139 100 $0.1346 1000 $0.13044 10000 $0.12884	Buy Now
Bristol Electronics	PTL1608-F1N5C		4,382			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Essentra Components STL-1-600-3-01 CBL CLIP TWIST LOCK NAT ARROW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL-1-600-3-01	Bulk	2,719		1	1 $0.38 10 $0.289 100 $0.221 1000 $0.17068 10000 $0.15176	Buy Now
Mouser Electronics	STL-1-600-3-01					1 $0.34 10 $0.259 100 $0.212 1000 $0.189 10000 $0.189	Get Quote
Newark	STL-1-600-3-01	Bulk	965		1	1 $0.131 10 $0.131 100 $0.131 1000 $0.131 10000 $0.131	Buy Now
RS	STL-1-600-3-01	Bulk		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.276 10000 $0.251	Get Quote
DB Roberts	STL-1-600-3-01					1 - 10 - 100 - 1000 - 10000 -	Get Quote
	STL-1-600-3-01					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TOKO Inc PTL1608-F15NT FIXED IND 15NH 200MA 2 OHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL1608-F15NT	Cut Tape	2,096		1	1 $0.12 10 $0.118 100 $0.12 1000 $0.1125 10000 $0.1125	Buy Now

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TL160 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TL16000		Telefunken Electronic	Electronic Component Data Book 1976		Scan	PDF
TL1605800000G		Amphenol Anytek	Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 16POS TOP ENTRY 5MM PCB		Original	PDF

TL160 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152
TLE4998 Abstract: TLE4998P4 PGSISI TLE4998x Text: Application N ote, V 1.0, August 2008 TLE4998 2-Point Calibration Guide Sensors N e v e r s t o p t h i n k i n g . Edition 2008-08 Published by Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany Infineon Technologies AG 2008. All Rights Reserved.	Original	PDF	TLE4998 TLE4998-2P TLE4998 TLE4998P4 PGSISI TLE4998x
PGSISI Abstract: TLE4997 hall effect interface WITH ADC Text: Application Note, V 1.00, December 2007 TLE4997 2-Point Calibration Guide Sensors Edition 2007-12 Published by Infineon Technologies AG 81726 Munich, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or	Original	PDF	TLE4997 PGSISI TLE4997 hall effect interface WITH ADC
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PDF	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
TL244 Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
TL250 Abstract: TL239 Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PDF	PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183408SV PTFB183408SV 340-watt

VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	PDF	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
atc200b104kw50 Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Untitled Abstract: No abstract text available Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PDF	PTFB093608FV PTFB093608FV H-34275G-6/2
TL172 Abstract: TL170 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170
TL306 Abstract: TL184 TL167 TL307 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307
ugn3020 hall effect device Abstract: UGN-3040 ugn3040 UGN3019 ugn3020 UGN3040T UGN-3040T QD344S7 UGN3030 Text: TEXAS INSTR Í L I N / I N T F O SS DEj 0^1754 QD344S7 fi V 8 9 6 1 7 2 4 TEXAS INSTR CLIN/INTFC ~r 34457 T-*^5-05 SERIES TL160 SILICON HALL EFFECT SWITCHES LINEAR INTEGRATED CIRCUITS • 55C D 2 62 0, D EC EM B ER 1983 Magnetic-Field-Senslng Hall-Effect Input	OCR Scan	PDF	QD344S7 UGN3019, UGN3020, UGN3030, UGN3040 TL160 TL16pply ugn3020 hall effect device UGN-3040 UGN3019 ugn3020 UGN3040T UGN-3040T UGN3030
TL16C5541 Abstract: 16C554 TL16C550 TL16C450 TL16C550B TL16C554 TL16C554I Text: TL16C554, TL16C554I ASYNCHRONOUS COMMUNICATIONS ELEMENT SLLS165C - JANUARY 1994 - REVISED AUGUST 1996 Integrated Asynchronous Communications Element Consists of Four Improved TL16C550 ACEs Plus Steering Logic In FIFO Mode, Each ACE Transmitter and Receiver Is Buffered With 16-Byte FIFO to	OCR Scan	PDF	TL16C554, TL16C554I SLLS165C TL16C550 16-Byte TL16C450 16-MHz 4040005/B MS-018 TL16C5541 16C554 TL16C550B TL16C554 TL16C554I
22CV10AP Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610 Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: C ircuit D e s c r ip t io n 5mm S Type No. SSA021 in g l e T 650 ie r MIN TYP 3.6 6.3 I ndicators Vf Volts m cd LED I Colour Board IfmA TYP 10 2.0 D @ MAX IfmA 3.0 10 O r d e r in g I n f o r m a t io n im e n s io n s / C o n n e c t io n s SSA021X.X	OCR Scan	PDF	SSA021 SSA021X. SSA218

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TL160 Search Results

TL160 Price and Stock

TOKO Inc PTL1608-F2N2C

Micro Commercial Components MCTL160N15Y-TP

TOKO Inc PTL1608-F1N5C

Essentra Components STL-1-600-3-01

TOKO Inc PTL1608-F15NT

TL160 Datasheets (2)

TL160 Datasheets Context Search

LM7805ACH-ND

TL272

TL145

TLE4998

PGSISI

TL139

transistor c124

TL139

PTFB093608

TL272

Untitled

TL244

TL250

Untitled

VdS 2093 2009

220v AC voltage stabilizer schematic diagram

atc200b104kw50

Untitled

TL172

TL306

ugn3020 hall effect device

TL16C5541

22CV10AP

Untitled