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    Toshiba America Electronic Components TC59S1608AFT-10

    IC,SDRAM,2X1MX8,CMOS,TSOP,44PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC59S1608AFT-10 89
    • 1 $6
    • 10 $3
    • 100 $2.6
    • 1000 $2.6
    • 10000 $2.6
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    TC59S1608AFT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59S1616AFT

    Abstract: TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 tc59s1608aft TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT
    Text: TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits and


    Original     		PDF TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT

    toshiba a10 motherboard

    Abstract: P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 toshiba a10 motherboard P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC

    toshiba a10 motherboard

    Abstract: MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 toshiba a10 motherboard MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821

    Asus PC MOTHERBOARD CIRCUIT MANUAL

    Abstract: cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5
    Text: A Guide to Building a PC with an AMD Athlon Processor TM Publication # 22914 Issue Date: September 1999 Rev: B 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with


    Original     		PDF 22914B/0--September Asus PC MOTHERBOARD CIRCUIT MANUAL cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5

    toshiba a10 motherboard

    Abstract: TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor

    gm72v661641ct7j

    Abstract: motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF
    Text: Microstar MSI Motherboard Memory Recommendations December 15, 1999 Microstar Motherboard Recommended Memory List (Revised 08-06-99) Manufacturer Model Number (IC Part Number) Type Size Fujitsu (BUFFALO) 81F16822D-102LFN (ECC) SDRAM 32MB LGS (Apacer) GM72V661641CTJ7


    Original     		PDF 81F16822D-102LFN GM72V661641CTJ7 MT48LC4M16A2TG-8C D4516821AG5-A10-7JF KM48S2020CT-GH TMS626812BDGE5H-8 TC59S1608AFT-10 HM5264165TTB60 HM5264805TTB60 gm72v661641ct7j motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5

    toshiba a10 motherboard

    Abstract: TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C

    TC59S1608AFT-10

    Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616
    Text: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits


    OCR Scan     		PDF TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 10OM-words TC59S1608AFT-10 TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616

    TC59S1616

    Abstract: TC59S1616AFT TC59S1608AF
    Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF

    THMY642051AEG10

    Abstract: MY642051 14V aeg aeg t 133
    Text: TOSHIBA THMY642051 AEG-10,-12A,-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY642051AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


    OCR Scan     		PDF THMY642051 AEG-10 THMY642051AEG TC59S1608AFT 484mW -10/12A) 208mW 80MAX. THMY642051AEG10 MY642051 14V aeg aeg t 133

    THMY6420B1AEG

    Abstract: aeg tt THMY6420B1AEG10
    Text: TOSHIBA TH MY6420B1 AEG-10,-12A,-12 TENTATIVE .TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6420B1AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


    OCR Scan     		PDF MY6420B1 AEG-10 THMY6420B1AEG TC59S1608AFT 484mW -10/12A) 208mW THMY6420B1AEG-10 THMY6420B1AEG H1111111h1111in aeg tt THMY6420B1AEG10

    THMY644041AEG10

    Abstract: 99 0609 00 04 THMY644041AEG THMY644041 aeg t 133 aeg tt
    Text: TOSHIBA TH M Y644041A EG -10,-12A.-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304 W O R D S x 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644041AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 16 pcs of TC59S1608AFT with Unbuffer on the printed circuit board.


    OCR Scan     		PDF Y644041A THMY644041AEG TC59S1608AFT 100ns 120ns THMY644041AEG 54MIN. 25MAX. THMY644041AEG10 99 0609 00 04 THMY644041 aeg t 133 aeg tt

    Untitled

    Abstract: No abstract text available
    Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM


    OCR Scan     		PDF TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words SD16010496 TC59S1616AFT, TC59S1608AFT,

    THMY6440A1AEG10

    Abstract: M8A010 D036
    Text: T O S H IB A TH M Y 6440A 1A EG -10,-12A,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304 W O R D S x 64 BITS SY N CH RO N O U S D R A M M O D U LE DESCRIPTION The THMY6440A1AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled


    OCR Scan     		PDF THMY6440A1AEG TC59S1608AFT 312mW 257mW 981mW THMY6440A1AEG-10 THMY6440A1AEG 54MIN. THMY6440A1AEG10 M8A010 D036