T3323 Search Results

oi9t

Abstract: R9800
Contextual Info: m+ m » > « » Vff 20 JAH 1999 AMP23993 <CE073B>0&T3323>Art>23993XJ. UR92-239 CUSTOMER DRA W I N G

T2333

Abstract: S2136 S4236 p2561 T7314 T5323 S7136 T1133 T3122 T5122
Contextual Info: m m m m m TRIANGULAR TYPE LED LAMP -•¿mi LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m As sample in P25-44 3x4.6m/m 4.0 ttJO MAX ax, -wo _ 5 174 M AX_ CATHOOi ^^55 . ^ ,3 ^ >| CMHQM moot -I2 W « 2 0.6 1.2 1.4 1.2 2.0 1.2 1.6 T1133 T4133

2SA1072

Abstract: 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374=]7b2 GDlbSOfl □ E1FMI T- 3 3 - 2 . 3 January 1990 Edition 1.1 _ P R O D U C T P R O FILE Fujfrsu 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon PNP general purpose, high power

VPC3 C

Contextual Info: International Power Transformers 115/230 V 50/60 Hz T33 and T34 - p o o Q o H o c For ^ ontro1 ar|d P°wer Supply i o o o e n e s . App|icatj0ns_ Part Size Number VA T33-2-10 T33-5-10 T33-10-10 T33-20-10 T33-30-10 T33-56-10 T33-2-12 T33-5-12 T33-10-12

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.

t2333

Abstract: T3122 t6322 T5323 81236 T1123 T1323 T2123 T2323 T3123
Contextual Info: TRIANGULAR TYPE LED LAMP • ■ ¡sm LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m 17.0 MAX CATHODE . As sample In P25-44 3x4.6m/m 4.0 M 27,0 MAX w Í2 LUMINOUS INTENSITY INM CD @10MA TYP 1 T1133 T1333 T2333 T3333 T3333P T4333 T5333 T7333 Red GaAsP

MRF495

Abstract: MRF4957HX s54 mo
Contextual Info: 4bE D • b3ti72S4 O Q T S T n 7 ■ MO Tb * 1 - 2 3 - 2 3 M O T O R O L A SC X S T R S / r f , MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MRF4957HX,HXV DM0 «///// PNP Silicon RF High-Frequency Transistor Discrete Military Operation . . .designed for high-gain, low-noise amplifier, oscillator and mixer applications.

2SC2433

Abstract: 2SG24 2SA1043 2SC2434 2SA1044 2SC1043 1baa
Contextual Info: FUJITSU MICRO ELE CTRONICS 3 IE D Bi 3 7 4 m 2 QDlbSOH 3 S F M I 3 T - 33 - X3 FUJITSU Edition 1.1 PRODUCT PROFILEZ 2SA1043, 2SA1044, 2SC2433, 2SC2434 Silicon High Speed Power Transistor DESCRIPTION T h is series are silicon PNP/NPN planer general purpose, high power switching

BDT88

Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.

mjM3792

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?254 00=52400 b «H O Tb 7 ^ 5 3 ^ 3 MOTOROLA S E M IC O N D U C T O R m m TECHNICAL DATA M JM 3 7 9 2 DM0 Discrete Military Products Suffixes: HX, HXV /////// PIMP S ilic o n P o w e r T ra n sisto r Processed per MIL-S-19500/379