SIHLZ44 Search Results

Contextual Info: IRLZ44S_RC, SiHLZ44S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

IRLZ44

Abstract: SiHLZ44 SiHLZ44-E3 81274
Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

D2Pak Package vishay material

Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

irlz44

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

IRLZ44

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET • Halogen-free According to IEC 61249-2-21

48 H diode

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

48 H diode

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21

272048

Contextual Info: IRLZ44_RC, SiHLZ44_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRLZ44

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

SMD DIODE marking AB

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

smd diode 12c

Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive

Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

SiHLZ14S

Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)