SIHG23N60E Search Results
SIHG23N60E Price and Stock
Vishay Siliconix SIHG23N60E-GE3MOSFET N-CH 600V 23A TO247AC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG23N60E-GE3 | Tube | 1 |
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SIHG23N60E-GE3 | 175 |
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SIHG23N60E-GE3 | 140 |
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Vishay Intertechnologies SIHG23N60E-GE3N-CHANNEL 600V - Bulk (Alt: SIHG23N60E-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG23N60E-GE3 | Bulk | 20 Weeks | 500 |
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SIHG23N60E-GE3 | 757 |
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SIHG23N60E-GE3 | Tube | 2,500 | 50 |
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SIHG23N60E-GE3 | 21 Weeks | 25 |
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SIHG23N60E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHG23N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23A TO247AC | Original |
SIHG23N60E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS |
Original |
SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.158 95 Qgs (nC) 16 Qgd (nC) 25 Configuration Single D APPLICATIONS |
Original |
SiHG23N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG23N60E AN609, 0914u 6390m 6702m 1736u 26-Jun14 |