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    SIHG17N60D Price and Stock

    Vishay Siliconix SIHG17N60D-E3

    MOSFET N-CH 600V 17A TO247AC
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    DigiKey SIHG17N60D-E3 Tube 500
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    Vishay Siliconix SIHG17N60D-GE3

    MOSFET N-CH 600V 17A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG17N60D-GE3 Tube 500
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    Vishay Intertechnologies SIHG17N60D-E3

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    Bristol Electronics SIHG17N60D-E3 500
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    Quest Components SIHG17N60D-E3 400
    • 1 $4.392
    • 10 $4.392
    • 100 $2.7084
    • 1000 $2.4156
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    Vishay Intertechnologies SIHG17N60D-GE3

    Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHG17N60D-GE3 1
    • 1 $3.46
    • 10 $3.12
    • 100 $2.48
    • 1000 $2.31
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    Vishay Intertechnologies SIHG17N60DGE3

    POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG17N60DGE3 500
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    SIHG17N60D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG17N60D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO247AC Original PDF
    SIHG17N60D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO247AC Original PDF

    SIHG17N60D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original
    PDF SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original
    PDF SiHG17N60D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original
    PDF SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original
    PDF SiHG17N60D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original
    PDF SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original
    PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836