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Vishay Siliconix SIHFPS38N60L-GE3 POWER MOSFET SUPER-247, 150 M @
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFPS38N60L-GE3	Tube			1	1 $6.24 10 $6.24 100 $3.955 1000 $3.955 10000 $3.955	Buy Now
Vishay Intertechnologies SIHFPS38N60L-GE3 MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFPS38N60L-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFPS38N60L-GE3	Reel		111 Weeks	480	1 - 10 - 100 - 1000 $3.89172 10000 $3.72086	Buy Now
Newark	SIHFPS38N60L-GE3	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SIHFPS38N60L-GE3			143 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHFPS38N60L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHFPS38N60L-GE3		Vishay Siliconix	POWER MOSFET SUPER-247, 150 M @		Original	PDF

SIHFPS38N60L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO274 Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TO274	PDF
IRFPS38N60L Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L O-247 18-Jul-08 IRFPS38N60L	PDF
Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFPS38N60L_RC, SiHFPS38N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFPS38N60L SiHFPS38N60L AN609, 4430m 1072m 7950m 0167m 2388m	PDF
Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 11-Mar-11	PDF
IRFPS38N60L Abstract: S11 CASE MARKING diode Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 11-Mar-11 IRFPS38N60L S11 CASE MARKING diode	PDF
Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L O-247 12-Mar-07	PDF
Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L O-247 18-Jul-08	PDF
S11 CASE MARKING diode Abstract: diode s11 Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive	Original	IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 18-Jul-08 S11 CASE MARKING diode diode s11	PDF