Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
11-Mar-11
IRFPC50A
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFPC50A,
SiHFPC50A
O-247
O-247
IRFPC50APbF
SiHFPC50A-E3
IRFPC50Amerchantability,
12-Mar-07
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFPC50A,
SiHFPC50A
O-247
18-Jul-08
IRFPC50A
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
11-Mar-11
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFPC50A,
SiHFPC50A
O-247
18-Jul-08
IRFPC50A
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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C 5478
Abstract: c 6090 datasheet AN609 IRFPC50A
Text: IRFPC50A_RC, SiHFPC50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRFPC50A
SiHFPC50A
AN609,
06-Jul-10
C 5478
c 6090 datasheet
AN609
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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Original
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PDF
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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