SIHFP27N60K Search Results
SIHFP27N60K Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt |
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IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
irfp27n60kContextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt |
Original |
IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 11-Mar-11 irfp27n60k | |
Contextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
Original |
IRFP27N60K, SiHFP27N60K O-247 12-Mar-07 | |
Contextual Info: IRFP27N60K_RC, SiHFP27N60K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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IRFP27N60K SiHFP27N60K AN609, 14-Jun-10 | |
Contextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt |
Original |
IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
irfp27n60kpbfContextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt |
Original |
IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfp27n60kpbf | |
IRFP27N60K
Abstract: SiHFP27N60K irfp27n60kpbf
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Original |
IRFP27N60K, SiHFP27N60K O-247 18-Jul-08 IRFP27N60K irfp27n60kpbf | |
Contextual Info: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt |
Original |
IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |