Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
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Original
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PDF
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IRFP048,
SiHFP048
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP048R
Abstract: 7052A
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFP048R,
SiHFP048R
O-247
O-220
O-218
18-Jul-08
IRFP048R
7052A
|
IRFP048R
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFP048R,
SiHFP048R
O-247
O-220
O-218
18-Jul-08
IRFP048R
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
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Original
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PDF
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IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFP048,
SiHFP048
O-247
O-220
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
PDF
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
|
Original
|
PDF
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IRFP048,
SiHFP048
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFP048,
SiHFP048
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
IRFP048
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFP048,
SiHFP048
O-247
O-247
O-220
O-218
18-Jul-08
IRFP048
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
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Original
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PDF
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IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
O-220AB
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
|
Original
|
PDF
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IRFP048,
SiHFP048
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
PDF
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
IRFP048
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling
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Original
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PDF
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IRFP048,
SiHFP048
O-247
O-247
O-220
O-218
18-Jul-08
IRFP048
|
12888
Abstract: No abstract text available
Text: IRFP048,SiHFP048_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRFP048
SiHFP048
AN609,
8496m
7588m
0859m
7796m
2486m
2499m
4790m
12888
|
|
|
379321
Abstract: No abstract text available
Text: IRFP048_RC, SiHFP048_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRFP048
SiHFP048
AN609,
07-Jun-10
379321
|
Untitled
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
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Original
|
PDF
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IRFP048,
SiHFP048
2002/95/EC
O-247AC
O-220AB
11-Mar-11
|
SiHF
Abstract: No abstract text available
Text: IRFP048R_RC, SiHFP048R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
|
IRFP048R
SiHFP048R
AN609,
07-Jun-10
SiHF
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IRFP048
Abstract: No abstract text available
Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole
|
Original
|
PDF
|
IRFP048,
SiHFP048
2002/95/EC
O-247AC
11-Mar-11
IRFP048
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
PDF
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
|
Original
|
PDF
|
IRFP048R,
SiHFP048R
O-247
O-220
12-Mar-07
|