SIHFI9Z34G Search Results
SIHFI9Z34G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFI9Z34G
Abstract: SiHFI9Z34G SiHFI9Z34G-E3
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Original |
IRFI9Z34G, SiHFI9Z34G O-220 18-Jul-08 IRFI9Z34G SiHFI9Z34G-E3 | |
Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature |
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IRFI9Z34G, SiHFI9Z34G O-220 12-Mar-07 | |
irfi9z34Contextual Info: IRFI9Z34G_RC, SiHFI9Z34G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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IRFI9Z34G SiHFI9Z34G AN609, 19-May-10 irfi9z34 | |
Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature |
Original |
IRFI9Z34G, SiHFI9Z34G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRFI9Z34G equivalent
Abstract: IRFI9Z34G SiHFI9Z34G-E3 SiHFI9Z34G irfi9z34
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Original |
IRFI9Z34G, SiHFI9Z34G O-220 18-Jul-08 IRFI9Z34G equivalent IRFI9Z34G SiHFI9Z34G-E3 irfi9z34 | |
Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature |
Original |
IRFI9Z34G, SiHFI9Z34G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature |
Original |
IRFI9Z34G, SiHFI9Z34G O-220 11-Mar-11 | |
irfi9z34gContextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature |
Original |
IRFI9Z34G, SiHFI9Z34G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfi9z34g | |
Contextual Info: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer 家庭用電化製品 エアコン 4 IH調理器 5 洗濯機 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6792-1304-CNCH | |
Contextual Info: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Home Appliances Air Conditioners Induction Cooking Washing Machines 4 5 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay |
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VMN-MS6761-1212 |