SiHF820AL
Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-263)
O-262)
18-Jul-08
IRF820A
IRF820AL
IRF820AS
SiHF820A
SiHF820AL-E3
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRF820ASPBF
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
12-Mar-07
IRF820ASPBF
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Untitled
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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AN609
Abstract: IRF820A SiHF820A
Text: IRF820A_RC, SiHF820A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF820A
SiHF820A
AN609,
12-Mar-10
AN609
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
2002/95/EC
18-Jul-08
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AN609
Abstract: IRF820AL IRF820AS SiHF820AL
Text: IRF820AS_RC, IRF820AL_RC, SiHF820AS_RC, SiHF820AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRF820AS
IRF820AL
SiHF820AS
SiHF820AL
AN609,
12-Mar-10
AN609
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IRF820A
Abstract: SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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IRF820A,
SiHF820A
O-220
18-Jul-08
IRF820A
SiHF820A-E3
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SiHF820AL
Abstract: 4.5v to 100v input regulator IRF820AL IRF820AS SiHF820AL-E3
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-263)
O-262)
18-Jul-08
4.5v to 100v input regulator
IRF820AL
IRF820AS
SiHF820AL-E3
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Untitled
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRF820A
Abstract: SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
11-Mar-11
IRF820A
SiHF820A-E3
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IRF820APBF
Abstract: IRF820A SiHF820A SiHF820A-E3
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
O-220
18-Jul-08
IRF820APBF
IRF820A
SiHF820A-E3
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Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRF820A
Abstract: No abstract text available
Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)
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Original
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PDF
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IRF820A,
SiHF820A
O-220
12-Mar-07
IRF820A
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