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Vishay Siliconix SIB900EDK-T1-GE3 MOSFET 2N-CH 20V 1.5A PPAK8X8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SIB900EDK-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIB900EDK-T1-GE3	Cut Tape			1	1 $0.84 10 $0.84 100 $0.84 1000 $0.84 10000 $0.84	Buy Now
	SIB900EDK-T1-GE3	Digi-Reel			1	1 $0.84 10 $0.84 100 $0.84 1000 $0.84 10000 $0.84	Buy Now
Vishay Intertechnologies SIB900EDK-T1-GE3 Transistor MOSFET Array Dual N-Channel 20V 1.5A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB900EDK-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIB900EDK-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15375	Buy Now

SIB900EDK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIB900EDK-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.5A SC-75-6		Original	PDF

SIB900EDK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21	Original	SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SC-75 Contextual Info: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21	Original	SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 18-Jul-08	PDF
Contextual Info: SPICE Device Model SiB900EDK Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiB900EDK 18-Jul-08	PDF
AN609 Contextual Info: SiB900EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiB900EDK AN609, 31-Mar-09 AN609	PDF
Contextual Info: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21	Original	SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21	Original	SiB900EDK SC-75 2002/95/EC SC75-6L-Dual 11-Mar-11	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF