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    Vishay Siliconix SIA439EDJ-T1-GE3

    MOSFET P-CH 20V 28A PPAK SC70-6
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    SIA439EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA439EDJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 28A SC-70-6L Original PDF

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    Abstract: No abstract text available
    Text: SiA439EDJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiA439EDJ AN609, 3882u 6090u 0449m 1865u 0867m 7187m 04-Dec-12 PDF

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    Abstract: No abstract text available
    Text: SiA439EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0165 at VGS = - 4.5 V - 28 0.0180 at VGS = - 3.7 V - 27 0.0235 at VGS = - 2.5 V - 23 0.0420 at VGS = - 1.8 V -6 Qg (Typ.)


    Original
    SiA439EDJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF