SI8816EDB Search Results

SI8816EDB

Contextual Info: Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A) a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 VDS (V) 30 MICRO FOOT 0.8 x 0.8 S

Contextual Info: SPICE Device Model Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

SI8816EDB

Contextual Info: Si8816EDB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 • • • • • Qg (Typ.) 2.4 nC APPLICATIONS

Contextual Info: Si8816EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm