SI7768DP Search Results

si7768

Contextual Info: New Product Si7768DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.007 at VGS = 10 V 30 0.0082 at VGS = 4.5 V 30 Qg (Typ.) 27.5 nC PowerPAK SO-8 COMPLIANT • VRM, POL, Server

Contextual Info: New Product Si7768DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.007 at VGS = 10 V 30 0.0082 at VGS = 4.5 V 30 Qg (Typ.) 27.5 nC PowerPAK SO-8 COMPLIANT • VRM, POL, Server

AN609

Abstract: 207879 si7768
Contextual Info: Si7768DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: New Product Si7768DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.007 at VGS = 10 V 30 0.0082 at VGS = 4.5 V 30 Qg (Typ.) 27.5 nC PowerPAK SO-8 COMPLIANT • VRM, POL, Server

Contextual Info: SPICE Device Model Si7768DP Vishay Siliconix N-Channel 30 V D-S MOSFET (SkyFET) DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C