SI7456CDP Search Results
SI7456CDP Price and Stock
Vishay Siliconix SI7456CDP-T1-GE3MOSFET N-CH 100V 27.5A PPAK SO-8 |
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SI7456CDP-T1-GE3 | Digi-Reel | 2,482 | 1 |
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Vishay Intertechnologies SI7456CDP-T1-GE3N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI7456CDP-T1-GE3) |
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SI7456CDP-T1-GE3 | Reel | 3,000 | 29 Weeks | 3,000 |
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SI7456CDP-T1-GE3 | 20,339 |
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SI7456CDP-T1-GE3 | 3,000 | 34 |
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SI7456CDP-T1-GE3 | 12,700 |
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SI7456CDP-T1-GE3 | 10,160 |
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SI7456CDP-T1-GE3 | Cut Tape | 3,000 | 0 Weeks, 1 Days | 1 |
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SI7456CDP-T1-GE3 | 29 Weeks | 3,000 |
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SI7456CDP-T1-GE3 | 7,469 |
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SI7456CDP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI7456CDP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 27.5A 8-SOIC | Original |
SI7456CDP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SI7456CDPContextual Info: SPICE Device Model Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7456CDP 18-Jul-08 | |
SI7456CDPContextual Info: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm |
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Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm |
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Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
AN609Contextual Info: Si7456CDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
Si7456CDP AN609, 17-Mar-10 AN609 | |
Contextual Info: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm |
Original |
Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |