SI7446DP Search Results
SI7446DP Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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Si7446DP | Vishay Intertechnology | N-Channel 30-V (D-S) Fast Switching MOSFET | Original | |||
SI7446DP | Vishay Siliconix | Original | ||||
SI7446DP | Vishay Telefunken | N-Channel Reduced Qg, Fast Switching MOSFET | Original | |||
SI7446DP-DS | Vishay Telefunken | DS-Spice Model for Si7446DP | Original | |||
Si7446DP SPICE Device Model |
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N-Channel 30-V (D-S), Fast Switching MOSFET | Original |
SI7446DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si7446DPContextual Info: Si7446DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 19 0.010 @ VGS = 4.5 V 17 D D PowerPakt SO-8 S 6.15 mm D D 5.15 mm 1 S 2 S 3 G G 4 D 8 N-Channel MOSFET D 7 D |
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Si7446DP S-02560--Rev. 20-Nov-00 | |
Si7446BDP
Abstract: Si7446BDP-T1 Si7446BDP-T1-E3 Si7446DP Si7446DP-T1 Si7446DP-T1-E3
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Si7446BDP Si7446DP Si7446BDP-T1-E3 Si7446DP-T1-E3 Si7446BDP-T1 Si7446DP-T1 09-Nov-06 | |
Si7446DPContextual Info: SPICE Device Model Si7446DP Vishay Siliconix N-Channel 30-V D-S , Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si7446DP 10-Oct-01 | |
Si7446DP
Abstract: U-S49
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Original |
Si7446DP 24-May-04 U-S49 | |
7133
Abstract: Si7446DP Si7446DP-T1
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Si7446DP Si7446DP-T1 08-Apr-05 7133 | |
Contextual Info: Si7446DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 19 0.010 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D D PowerPAKr SO-8 |
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Si7446DP Si7446DP-T1 18-Jul-08 SI7446DP-T1-GE3 SI7446DP-T1-GE3 | |
Si7446DP
Abstract: Si7446DP-T1
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Si7446DP Si7446DP-T1 18-Jul-08 | |
Si7446DPContextual Info: SPICE Device Model Si7446DP Vishay Siliconix N-Channel 30-V D-S , Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si7446DP 18-Jul-08 | |
Contextual Info: Si7446DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 19 0.010 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D D PowerPAKr SO-8 |
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Si7446DP Si7446DP-T1 S-31728--Rev. 18-Aug-03 | |
Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC |
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Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive |
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Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI7456DDP-T1-GE3
Abstract: 2285b
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Si7456DDP Si7456DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2285b | |
Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification |
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SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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SiR460D
Abstract: SiR460DP siR460
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SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiR460D siR460 | |
SI7288Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET |
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Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288 | |
SIR662Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View |
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SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662 | |
SiR826DPContextual Info: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR826DP 2002/95/EC SiR826DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server |
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Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI7997DpContextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7997DP 2002/95/EC Si7997DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sir158Contextual Info: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir158 | |
si7272Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized |
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Si7272DP Si7272DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7272 | |
Contextual Info: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si7463DP 2002/95/EC Si7463DP-T1-E3 Si7463DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7454DDPContextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |