SI7430DP Search Results

74191

Abstract: 74191 APPLICATIONS 74191 datasheet Si7430DP
Contextual Info: SPICE Device Model Si7430DP Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and

Si7430DP

Abstract: Si7430DP-T1-E3 Si7430DP-T1-GE3
Contextual Info: Si7430DP Vishay Siliconix N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through

74282

Abstract: SI7430DP Si7430DP-T1-E3
Contextual Info: Si7430DP Vishay Siliconix New Product N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested

Contextual Info: SPICE Device Model Si7430DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7430DP

Abstract: TB 19 30 016 0271
Contextual Info: Si7430DP Vishay Siliconix N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through

6914

Abstract: AN609 Si7430DP
Contextual Info: Si7430DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74282

Abstract: Si7430 E 168 066
Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and

Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and

74282

Abstract: Si7430DP Si7430DP-T1-E3 Si7430DP-T1-GE3 TB 19 30 016 0271
Contextual Info: Si7430DP Vishay Siliconix N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through

74282

Abstract: Si7430DP Si7430DP-T1-E3
Contextual Info: Si7430DP Vishay Siliconix New Product N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested

Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and

Contextual Info: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and

74191

Abstract: SI7430DP 74191 datasheet A16534
Contextual Info: SPICE Device Model Si7430DP Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: LTC3862-2 Multi-Phase Current Mode Step-Up DC/DC Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION Wide VIN Range: 5.5V to 36V Operation 2-Phase Operation Reduces Input and Output Capacitance Fixed Frequency, Peak Current Mode Control Internal 10V LDO Regulator

SK2 diode

Contextual Info: Application Note 1896 Author: Richard Garcia HIP2103, HIP2104 Evaluation Board User’s Guide Introduction The HIP2103_4MBEVAL1Z is an evaluation tool for the HIP2103 and HIP2104 half bridge MOSFET drivers. This tool consists of a mother board and HIP2103DBEVAL1Z and

LT37562

Abstract: LT3755-2 power supply driver led 30w schematic LT3756 37562 30W led LT3755 lt3756-2 MBRS3100T3 lfkb
Contextual Info: LT3756/LT3756-1/LT3756-2 100VIN, 100VOUT LED Controller Features Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 6V to 100V Output Voltage Up to 100V Constant-Current and Constant-Voltage Regulation 100mV High Side Current Sense Drives LEDs in Boost, Buck Mode, Buck-Boost Mode,

LTC3862EGN-1

Abstract: LTC3862 LTC3862EUH LTC3862IGN-1 MURS320T3h isolated sepic converter MOSFET P-CH 250V 5A LTC3862-1 LTC3862-1E LTC3813
Contextual Info: LTC3862-1 Multi-Phase Current Mode Step-Up DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n Wide VIN Range: 8.5V to 36V Operation 2-Phase Operation Reduces Input and Output Capacitance Fixed Frequency, Peak Current Mode Control 10V Gate Drive for High Voltage MOSFETs

Contextual Info: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES n n n n n n n n n n n n n Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit Clean Start-Up Into Pre-Biased Output Secondary-Side Control for Fast Transient Response