SI7403DN Search Results

Si7403DN

Contextual Info: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC

MOSFET 2358

Abstract: 4833 AN609 Si7403DN
Contextual Info: Si7403DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

71560

Abstract: Si7403DN
Contextual Info: SPICE Device Model Si7403DN Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7403BDN-T1-E3

Abstract: 1212-8 PowerPAK 1212-8 Si7403BDN Si7403DN
Contextual Info: Specification Comparison Vishay Siliconix Si7403BDN vs. Si7403DN Description: P-Channel, 20 V D-S MOSFET Package: PowerPAK 1212-8 Pin Out: Identical Part Number Replacements: Si7403BDN-T1-E3 Replaces Si7403DN-T1-E3 Si7403BDN-T1 Replaces Si7403DN-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si7403DN

Contextual Info: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC

Contextual Info: Si7403DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC