SI6924EDQ Search Results
SI6924EDQ Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI6924EDQ | Vishay Siliconix | N-Channel 2.5-V (G-S) Battery Switch, ESD Protection | Original | |||
Si6924EDQ SPICE Device Model |
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Dual N-Channel 2.5-V (G-S) MOSFET, ESD Protected | Original |
SI6924EDQ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si6924EDQContextual Info: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si6924EDQ 23-May-04 | |
Si6924EDQ
Abstract: MOSFET TSSOP-8 dual n-channel
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Original |
Si6924EDQ S-59522--Rev. 30-Nov-98 MOSFET TSSOP-8 dual n-channel | |
Contextual Info: Si6924EDQ Siliconix Dual N-Ch 2.5-V G-S MOSFET, Common Drain New Product PRODUCT SUMMARY VDS (V) 28 RDS(ON) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 ESD Protected 2000 V TSSOP-8 1 8 D 1.8 kW 7 S2 3 6 S2 4 5 G2 |
Original |
Si6924EDQ 10-Aug-98 | |
Si6924EDQ
Abstract: Si6924AEDQ Si6924AEDQ-T1
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Original |
Si6924AEDQ Si6924EDQ Si6924AEDQ-T1 Si6924EDQ-T1 Si6924AEDQ-T1-E3 09-Nov-06 | |
Si6924EDQContextual Info: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS |
Original |
Si6924EDQ 18-Jul-08 | |
Si6924EDQContextual Info: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si6924EDQ 18-Jul-08 | |
Si6924EDQContextual Info: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si6924EDQ 22-Aug-02 | |
Contextual Info: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS |
Original |
Si6924EDQ 08-Apr-05 |