Si6924EDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6924EDQ
23-May-04
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Si6924EDQ
Abstract: MOSFET TSSOP-8 dual n-channel
Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS
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Si6924EDQ
S-59522--Rev.
30-Nov-98
MOSFET TSSOP-8 dual n-channel
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Untitled
Abstract: No abstract text available
Text: Si6924EDQ Siliconix Dual N-Ch 2.5-V G-S MOSFET, Common Drain New Product PRODUCT SUMMARY VDS (V) 28 RDS(ON) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 ESD Protected 2000 V TSSOP-8 1 8 D 1.8 kW 7 S2 3 6 S2 4 5 G2
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Si6924EDQ
10-Aug-98
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Si6924EDQ
Abstract: Si6924AEDQ Si6924AEDQ-T1
Text: Specification Comparison Vishay Siliconix Si6924AEDQ vs. Si6924EDQ Description: N-Channel, 2.5 V G-S Battery Switch with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6924AEDQ-T1 Replaces Si6924EDQ-T1 Si6924AEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6924EDQ-T1
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Si6924AEDQ
Si6924EDQ
Si6924AEDQ-T1
Si6924EDQ-T1
Si6924AEDQ-T1-E3
09-Nov-06
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Si6924EDQ
Abstract: No abstract text available
Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS
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Si6924EDQ
18-Jul-08
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Si6924EDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si6924EDQ
18-Jul-08
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PDF
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Si6924EDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si6924EDQ
22-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si6924EDQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V "4.6 0.038 @ VGS = 3.0 V "4.3 0.042 @ VGS = 2.5 V "4.1 FEATURES D D D D ESD Protected 2000 V D rDS(on) Rating at 2.5-V VGS
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Si6924EDQ
08-Apr-05
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