SI5504BDC Search Results

Contextual Info: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.

AN609

Abstract: Si5504BDC
Contextual Info: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

si5504

Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1
Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

Si5504BDC

Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)

Si5504BDC

Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5504BDC

Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET
Contextual Info: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1

Si5504BDC

Abstract: Si5504BDC-T1-E3
Contextual Info: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8

si5504

Abstract: Si5504BDC Si5504BDC-T1-E3
Contextual Info: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8

smd transistor m6

Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor
Contextual Info: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

Siliconix mosfet guide

Abstract: list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X
Contextual Info: N & P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

Power MOSFET

Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs