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    SI4451DY Search Results

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    SI4451DY Price and Stock

    Vishay Siliconix SI4451DY-T1-E3

    MOSFET P-CH 12V 10A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4451DY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4451DY-T1-GE3

    MOSFET P-CH 12V 10A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4451DY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4451DY-T1-GE3

    Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4451DY-T1-GE3)
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    Avnet Americas SI4451DY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4451DY-T1-E3

    Transistor, mosfet, p-Channel,12V V(Br)Dss,10A I(D),so |Vishay SI4451DY-T1-E3
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    Newark SI4451DY-T1-E3 Reel 2,500
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    Quest Components SI4451DY-T1-E3 767
    • 1 $2.408
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    SI4451DY-T1-E3 480
    • 1 $10.35
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    EBV Elektronik SI4451DY-T1-E3 143 Weeks 2,500
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    SI4451DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4451DY Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si4451DY SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI4451DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF
    SI4451DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF

    SI4451DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 11-Mar-11 PDF

    74222

    Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4451DY Si4467DY Si4451DY-T1-E3 Si4467DY-T1-E3 Si4451DY-T1 Si4467DY-T1 31-Oct-06 74222 PDF

    Si4451DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4451DY 18-Jul-08 PDF

    Si4451DY

    Abstract: No abstract text available
    Text: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch


    Original     		Si4451DY S-03160--Rev. 17-Feb-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		Si4451DY Si4451DY-T1 Si4451DY-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		Si4451DY Si4451DY-T1 Si4451DY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4451DY 2002/96/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08 PDF

    Si4451DY

    Abstract: Si4451DY-T1 Si4451DY-T1-E3
    Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original     		Si4451DY Si4451DY-T1 Si4451DY-T1-E3 S-61005-Rev. 12-Jun-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TR-59

    Abstract: Si4451DY
    Text: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4451DY S-51095Rev. 13-Jun-05 TR-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    74239

    Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
    Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4451DY Si4465DY Si4451DY-T1-E3 Si4465DY-T1-E3 Si4451DY-T1 Si4465DY-T1 31-Oct-06 74239 PDF

    4093 N

    Abstract: 4093 DATASHEET 7313 AN609 Si4451DY 442.017
    Text: Si4451DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4451DY AN609 16-Mar-07 4093 N 4093 DATASHEET 7313 442.017 PDF

    Si4451DY-T1-E3

    Abstract: Si4451DY
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch


    Original     		Si4451DY 08-Apr-05 PDF