Untitled
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4416DY
S-56945--Rev.
23-Nov-98
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY Siliconix N-Channel 30-V D-S Rated MOSFET New Product Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4416DY
S-55464--Rev.
20-Apr-98
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Si4416DY
Abstract: No abstract text available
Text: SPICE Device Model Si4416DY N-Channel 30-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si4416DY
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4416DY
S-56945--Rev.
23-Nov-98
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4416DY
S-54955--Rev.
13-Oct-97
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4416DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY
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Si4416DY
Si4416DY-T1
08-Apr-05
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Si4416DY
Abstract: fairchild NDS 9959 nds 40
Text: Si4416DY Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
fairchild NDS
9959
nds 40
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Untitled
Abstract: No abstract text available
Text: Si4416DY Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
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Si4416DY
Abstract: No abstract text available
Text: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4416DY
18-Jul-08
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Si4416DY
Abstract: Si4416DY-T1
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY
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Si4416DY
Si4416DY-T1
S-31062--Rev.
26-May-03
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74090
Abstract: 5888 AN609 Si4416DY
Text: Si4416DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4416DY
AN609
31-Aug-05
74090
5888
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Si4416DY
Abstract: SOT96- 1
Text: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .
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Si4416DY
M3D315
OT96-1
OT96-1,
SOT96- 1
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Untitled
Abstract: No abstract text available
Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
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Power MOSFET, Fairchild
Abstract: Fairchild MOSFET Si4416DY
Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
Power MOSFET, Fairchild
Fairchild MOSFET
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gd 361 transistor
Abstract: Si4416DY
Text: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4416DY
S-60147Rev.
13-Feb-06
gd 361 transistor
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Untitled
Abstract: No abstract text available
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4416DY
08-Apr-05
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Si4416DY
Abstract: Si4416DY-T1
Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4416DY
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Si4416DY
Si4416DY-T1
18-Jul-08
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PR515
Abstract: mitac RLZ2.0B PD3A pc17 PC532 mitac 8 1U-0805 RLZ2.7B
Text: 1 2 3 4 5 6 7 8 VMAIN A 1 1 A PL13 120Z/100M 2012 2 2 PC34 0.01U 0603 1 PC15 0.01U 0603 + PC518 100U 25V 5 6 7 8 2 2 1 GND PU3 SI4416DY D GND GND G 4 T1 1 1 1 VTT RLZ2.0B 1 1 PC530 1000P 0603 PR8 10K 0603 1% 2 2 K PD5 PC35 10U 1210 10V B A PC17 + 220U 7343
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120Z/100M
PR501
PC518
SI4416DY
SB3032P
PC532
PC509
PL502
14U/13
PR515
mitac
RLZ2.0B
PD3A
pc17
mitac 8
1U-0805
RLZ2.7B
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Si4416DY
Abstract: No abstract text available
Text: Si4416DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 0.028 @ VGS = 4.5 V 7.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel
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Si4416DY
S-05103--Rev.
17-Dec-01
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MAX1710
Abstract: MAX1710EVKIT MAX1711 MAX1711EEG T510X477M006AS high power pulse generator with mosfet DO5022P-222HC MTD3055 mosfet hitachi
Text: 19-4781; Rev 0; 11/98 MAX1710 Evaluation Kit The MAX1710 evaluation kit EV kit demonstrates the data sheet’s standard 7A notebook CPU application circuit (see MAX1710/MAX1711 data sheet). This DC-DC converter steps down high-voltage batteries and/or AC
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MAX1710
MAX1710/MAX1711
MAX1710/MAX1711
MAX1710EVKIT
MAX1711
MAX1711EEG
T510X477M006AS
high power pulse generator with mosfet
DO5022P-222HC
MTD3055
mosfet hitachi
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Untitled
Abstract: No abstract text available
Text: End of Life. Last Available Purchase Date is 31-Dec-2014 Si9136 Vishay Siliconix Multi-Output Power-Supply Controller DESCRIPTION FEATURES The Si9136 is a current-mode PWM and PSM converter controller, with two synchronous buck converters 3.3 V and 5 V and a flyback (non-isolated buck-boost) converter
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31-Dec-2014
Si9136
Si9136
28-pin
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si4416DY VISHAY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) (q 1 lD (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 30 9° ' D D D D SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )
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Si4416DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: S U R -g!“ 16DY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product V M (VJ *BS (O N) lo (A l 0 .018 @ V GS = 10 V ± 9 .0 0 .028 & Vqs = 4.5 V ± 7 .3 30 D D D D ú p SO-8 0 - I& 1 Ô s N-Channel M O SFET A B S O L U T E M A X IM U M
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23-Nov
Si4416DY
23-Nov-98
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