SI4340CDY Search Results
SI4340CDY Price and Stock
Vishay Siliconix SI4340CDY-T1-E3MOSFET 2N-CH 20V 14.1A 14SOIC |
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SI4340CDY-T1-E3 | Cut Tape | 1 |
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SI4340CDY Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI4340CDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 14.1A 14-SOIC | Original |
SI4340CDY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1 |
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Si4340CDY SO-14 08-Apr-05 | |
rc 4709
Abstract: 9947-n AN609
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Si4340CDY AN609, CONF0212 22-Apr-08 rc 4709 9947-n AN609 | |
SI4340CDYContextual Info: SPICE Device Model Si4340CDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4340CDY 18-Jul-08 | |
Contextual Info: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 |
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Si4340CDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 |
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Si4340CDY SO-14 18-Jul-08 | |
si4340cdy
Abstract: Si4340DY Si4340DY-T1 Si4340DY-T1-E3
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Si4340CDY Si4340DY SO-14 Si4340CDY-T1-E3 Si4340DY-T1-E3 Si4340DY-T1 15-Jul-09 | |
Contextual Info: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1 |
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Si4340CDY SO-14 18-Jul-08 | |
Contextual Info: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 |
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Si4340CDY SO-14 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 |
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Si4340CDY 2002/95/EC SO-14 11-Mar-11 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |